JANTXV2N3767
JANTXV2N3767 Datasheet
• Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/518
| Part | Datasheet |
|---|---|
JANTXV2N3767 |
JANTXV2N3767 (pdf) |
| PDF Datasheet Preview |
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| NPN Power Silicon Transistor 2N3766 & 2N3767 • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/518 • TO-66 TO-213AA Package Maximum Ratings Ratings Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Base Current Collector Current Total Power Dissipation TC = +25 °C 1 Operating & Storage Temperature Range Symbol VCEO VCBO VEBO IB IC PT Top, Tstg 2N3766 60 2N3767 80 -65 to +200 Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Case Maximum 1 Derate linearly 143 mW/°C between TC = +25°C and TC = +200°C Units Vdc Adc W °C Units °C/W Electrical Characteristics TC = 25°C unless otherwise noted OFF Characteristics Collector - Emitter Breakdown Voltage IC = 100 mAdc 2N3766 2N3767 Symbol V BR CEO Mimimum 60 80 Maximum --- Collector - Emitter Cutoff Current VCE = 60 Vdc VCE = 80 Vdc Collector - Emitter Cutoff Current VCE = 80 Vdc, VBE = Vdc VCE = 100 Vdc, VBE = Vdc Collector - Base Cutoff Current VCB = 80 Vdc VCB = 100 Vdc Emitter - Base Cutoff Current VEB = Vdc 2N3766 2N3767 2N3766 2N3767 2N3766 2N3767 ICEO ICEX ICBO IEBO Units Vdc uAdc 2N3766 & 2N3767 Electrical Characteristics -con’t ON Characteristics 2 |
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