DST1550S

DST1550S Datasheet

DST1550S

Part	Datasheet
DST1550S	DST1550S (pdf)

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DST1550S Schottky Barrier Rectifier DST816505S0S, 8, A15, A60, V5,0TVO, T-2O7-72B77, BS,inSginlegle RoHS Pb e3 Littelfuse DST series Ultra Low VF Schottky Barrier Rectifier is designed to meet the general requirements of commercial and industry applications by providing high temperature, low leakage and lower VF products. It is suitable for high frequency switching mode power supply, free-wheeling diodes and polarity protection diodes. Pin out Cathode Anode 1 Anode 2 • low forward voltage drop • frequency operation • Level 1 - unlimited • junction temperature capability • MOS Schottky technology • die in TO-277B Package • E3 means 2nd level interconnect is Pb-free and the terminal finish material is tin Sn IPC/ JEDEC J-STD609A.01 • mode power supply • converters • diodes • Protection Diodes Maximum Ratings Parameters Peak Inverse Voltage Average Forward Current Peak One Cycle Non-Repetitive Surge Current Symbol VRWM IF AV IFSM Test Conditions - 50% duty cycle = 125 °C rectangular wave form ms, half Sine pulse Max 50 15 Unit V A Electrical Characteristics Parameters Forward Voltage Drop* Symbol VF1 VF2 IR1 IR2 Test Conditions Pulse, TJ = 25 °C Pulse, TJ = 25 °C Pulse, TJ = 25 °C Pulse, TJ = 125 °C Pulse, TJ = 125 °C Pulse, TJ = 125 °C = rated VR, TJ = 25 °C = rated VR, TJ = 125 °C Unit V mA 2017 Littelfuse, Inc Specifications are subject to change without notice. Schottky Barrier Rectifier DST816505S0S, 8, A15, A60, V5,0TVO, T-2O7-72B77, BS,inSginlegle Thermal-Mechanical Specifications Parameters Junction Temperature Storage Temperature Maximum Thermal Resistance Junction to Ambient Maximum Thermal Resistance Junction to Lead Approximate Weight Case Style

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DST1550S

Schottky Barrier Rectifier DST816505S0S, 8, A15, A60, V5,0TVO, T-2O7-72B77, BS,inSginlegle

RoHS Pb e3

Littelfuse DST series Ultra Low VF Schottky Barrier Rectifier is designed to meet the general requirements of commercial and industry applications by providing high temperature, low leakage and lower VF products.

It is suitable for high frequency switching mode power supply, free-wheeling diodes and polarity protection diodes.

Pin out

Cathode

Anode 1 Anode 2
• low forward voltage drop
• frequency operation
• Level 1 - unlimited
• junction temperature capability
• MOS Schottky technology
• die in TO-277B Package
• E3 means 2nd level interconnect is Pb-free and the terminal finish material is tin Sn IPC/ JEDEC J-STD609A.01
• mode power supply
• converters
• diodes
• Protection Diodes

Maximum Ratings

Parameters Peak Inverse Voltage Average Forward Current Peak One Cycle Non-Repetitive Surge

Current

Symbol VRWM IF AV

IFSM

Test Conditions -
50% duty cycle = 125 °C rectangular wave form
ms, half Sine pulse

Max 50 15

Unit V A

Electrical Characteristics Parameters

Forward Voltage Drop*

Symbol VF1

VF2 IR1 IR2

Test Conditions

Pulse, TJ = 25 °C Pulse, TJ = 25 °C Pulse, TJ = 25 °C Pulse, TJ = 125 °C Pulse, TJ = 125 °C Pulse, TJ = 125 °C = rated VR, TJ = 25 °C = rated VR, TJ = 125 °C

Unit V mA
2017 Littelfuse, Inc Specifications are subject to change without notice.

Schottky Barrier Rectifier DST816505S0S, 8, A15, A60, V5,0TVO, T-2O7-72B77, BS,inSginlegle

Thermal-Mechanical Specifications

Parameters Junction Temperature Storage Temperature Maximum Thermal Resistance Junction to Ambient Maximum Thermal Resistance

Junction to Lead Approximate Weight

Case Style

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Datasheet ID: DST1550S 646456