IXTH7P50
IXTH7P50 Datasheet
IXTH 7P50 IXTH 8P50
| Part | Datasheet |
|---|---|
IXTH7P50 |
IXTH7P50 (pdf) |
| PDF Datasheet Preview |
|---|
| Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH 7P50 IXTH 8P50 V IR DSS D25 DS on -500V -7 A -500V -8 A Symbol V V DGR VGS VGSM ID25 EAR PD T T stg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJ TC = 25°C TC = 25°C TC = 25°C Maximum lead temperature for soldering mm in. from case for 10 s Mounting torque Maximum Ratings -500 -500 ±20 ±30 7P50 8P50 7P50 8P50 7P50 8P50 -55 +150 -55 +150 Nm/lb.in. TO-247 AD D TAB G = Gate, S = Source, D = Drain, TAB = Drain • International standard package JEDEC TO-247 AD • Low RDS on HDMOSTM process •Rugged polysilicon gate cell structure •Unclamped Inductive Switching UIS rated •Low package inductance <5 nH - easy to drive and to protect V DSS V GS th IGSS I |
| More datasheets: 33A-001D | 33A-015D | 33A-005D | 33A-002D | BFR 705L3RH E6327 | DDM36H4PNK127 | V23818-M305-L57 | SPD50N03S2L-06 | SPD50N03S2L06T | BSZ023N04LSATMA1 |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived IXTH7P50 Datasheet file may be downloaded here without warranties.