BFR 705L3RH E6327
BFR 705L3RH E6327 Datasheet
BFR705L3RH
| Part | Datasheet |
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BFR 705L3RH E6327 |
BFR 705L3RH E6327 (pdf) |
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| NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor for low current operation • Ideal for low power consumption LNA design • Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more • Outstanding noise figure F = dB at GHz Outstanding noise figure F = dB at 6 GHz • High maximum stable and available gain at only 7mA Gms = 25 dB at GHz, Gma = 18 dB at 6 GHz • 150 GHz fT-Silicon Germanium technology • Extremely small and flat leadless package, height mm max. • Pb-free RoHS compliant package1 • Qualified according AEC Q101 * Short term description BFR705L3RH ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR705L3RH Marking Pin Configuration 1Pb-containing package may be available upon special request Package TSLP-3-9 2007-03-30 BFR705L3RH Maximum Ratings Parameter Collector-emitter voltage TA > 0°C TA 0°C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1 , TS 123 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point2 Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Symbol RthJS Value Unit -65 150 -65 150 Value Unit Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 13 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = V, IC = 0 DC current gain IC = 7 mA, VCE = 3 V, pulse measured V BR CEO 4 ICES 30 µA ICBO 100 nA IEBO 1 µA 160 250 400 - 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance |
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