KSD1221OTU
KSD1221OTU Datasheet
KSD1221
| Part | Datasheet |
|---|---|
KSD1221OTU |
KSD1221OTU (pdf) |
| Related Parts | Information |
|---|---|
KSD1221GTU |
KSD1221GTU |
KSD1221YTU |
KSD1221YTU |
| PDF Datasheet Preview |
|---|
| KSD1221 KSD1221 Low Frequency Power Amplifier • Low Collector-Emitter Saturation Voltage • Complement to KSB906 I-PACK Base Collector Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation TC=25°C Collector Dissipation Ta=25°C Junction Temperature Storage Temperature Value 60 7 3 20 1 150 - 55 ~ 150 Units V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCEO ICBO IEBO hFE1 hFE2 VCE sat VBE on fT Cob tON tSTG tF Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time IC = 50mA, IB = 0 VCB = 60V, IE = 0 VEB = 7V, IC = 0 VCE = 5V, IC = 0.5A VCE = 5V, IC = 3A IC = 3A, IB = 0.3A IC = 5A, IC = 0.5A VCE = 5V, IC = 0.5A VCB = 10V, f = 1MHz VCC = 30V, IC = 1A IB1 = -IB2 = 0.2A RL = hFE Classification Classification hFE1 O 60 ~ 120 Y 100 ~ 200 Min. 60 60 20 Typ. Max. 100 300 Units V µA µA G 150 ~ 300 2000 Fairchild Semiconductor International Typical Characteristics IC[A], COLLECTOR CURRENT VCE sat [V], SATURATION VOLTAGE |
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