IXTH50P085
IXTH50P085 Datasheet
IXTH 50P085
| Part | Datasheet |
|---|---|
IXTH50P085 |
IXTH50P085 (pdf) |
| PDF Datasheet Preview |
|---|
| Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH 50P085 VDSS = ID25 = = RDS on -85 V -50 A 55 VDSS VDGR VGS VGSM ID25 IDM IAR EAR PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJ TC = 25°C TC = 25°C TC = 25°C Maximum lead temperature for soldering mm in. from case for 10 s Mounting torque Maximum Ratings ±20 ±30 -200 -55 +150 -55 +150 Nm/lb.in. TO-247 AD D TAB G = Gate, S = Source, D = Drain, TAB = Drain • International standard package JEDEC TO-247 AD • Low RDS on HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching UIS rated • Low package inductance <5 nH - easy to drive and to protect VDSS VGS th IGSS IDSS RDS on Test Conditions VGS = 0 V, ID = -250 µA VDS = VGS, ID = -250 µA VGS = ±20 VDC, VDS = 0 VDS = • VDSS VGS = 0 V VGS = -10 V, ID = • ID25 Characteristic Values TJ = 25°C, unless otherwise specified min. typ. max. TJ = 25°C TJ = 125°C ±100 nA -25 µA -1 mA • High side switching • Push-pull amplifiers • DC choppers • Automatic test equipment Advantages • Easy to mount with 1 screw isolated mounting screw hole • Space savings • High power density |
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