IXTA 10N60P IXTI 10N60P IXTP 10N60P
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IXTI10N60P (pdf) |
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PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA 10N60P IXTI 10N60P IXTP 10N60P V = 600 V DSS ID25 = 10 A RDS on 740 Test Conditions Maximum Ratings TO-263 IXTA VDSS V IAR E TJ = 25° C to 175° C 25° 175° Continuous Transient = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C = 25° C TC = 25° C ±30 Leaded TO-263 IXTI dv/dt PD TJ TJM Tstg TL TSOLD Md Weight IS di/dt A/µs, VDD TJ C, RG = 10 TC = 25° C mm in. from case for 10 s Plastic body for 10 s Mounting torque TO-220 Mounting force Leaded TO-263 TO-220 TO-263 types 200 -55 +150 150 -55 +150 V/ns W °C °C °C TO-220 IXTP Nm/lb.in. N/lb. G = Gate S = Source D = Drain TAB = Drain Test Conditions TJ = 25° C, unless otherwise specified |
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