IXTI10N60P

IXTI10N60P Datasheet


IXTA 10N60P IXTI 10N60P IXTP 10N60P

Part Datasheet
IXTI10N60P IXTI10N60P IXTI10N60P (pdf)
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PolarHVTM Power MOSFET

N-Channel Enhancement Mode Avalanche Rated

IXTA 10N60P IXTI 10N60P IXTP 10N60P

V = 600 V DSS

ID25 = 10 A RDS on 740

Test Conditions

Maximum Ratings TO-263 IXTA

VDSS V

IAR E

TJ = 25° C to 175° C
25°
175°

Continuous Transient
= 25° C

TC = 25° C, pulse width limited by TJM

TC = 25° C
= 25° C

TC = 25° C
±30

Leaded TO-263 IXTI
dv/dt

PD TJ TJM Tstg

TL TSOLD Md

Weight

IS di/dt A/µs, VDD TJ C, RG = 10

TC = 25° C
mm in. from case for 10 s Plastic body for 10 s Mounting torque TO-220

Mounting force

Leaded TO-263

TO-220 TO-263 types
200 -55 +150
150 -55 +150

V/ns

W °C °C °C

TO-220 IXTP

Nm/lb.in.

N/lb.

G = Gate S = Source

D = Drain TAB = Drain

Test Conditions

TJ = 25° C, unless otherwise specified
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Datasheet ID: IXTI10N60P 644335