MPSA12_D27Z
MPSA12_D27Z Datasheet
MPSA12
| Part | Datasheet |
|---|---|
MPSA12_D27Z |
MPSA12_D27Z (pdf) |
| Related Parts | Information |
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MPSA12_D26Z |
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MPSA12_D74Z |
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MPSA12_D75Z |
MPSA12_D75Z |
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MPSA12 |
MPSA12 |
| PDF Datasheet Preview |
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| MPSA12 MPSA12 NPN Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from process • See MPSA14 for characteristics. TO-92 Absolute Maximum Ratings * TA=25°C unless otherwise noted Emitter Base Collector Parameter Value Units VCES Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current - Continuous TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ +150 * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES These ratings are based on a maximum junction temperature of 150 degrees C. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TA=25°C unless otherwise noted Parameter Test Condition Off Characteristics V BR CES Collector-Emitter Breakdown Voltage ICBO Collector Cutoff Current ICES Emitter Cutoff Current IEBO Emitter Cutoff Current On Characteristics * IC = 100µA, IE = 0 VCB = 15V, IE = 0 VCB = 15V, IC = 0 VEB = 10V, IC = 0 DC Current Gain VCE sat Collector-Emitter Saturation Voltage VBE on Base-Emitter On Voltage * Pulse Test Pulse Width 300µs, Duty Cycle |
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