IXRH40N120

IXRH40N120 Datasheet


IXRH 40N120

Part Datasheet
IXRH40N120 IXRH40N120 IXRH40N120 (pdf)
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IXRH 40N120

VCES = ±1200 V IC25 = 55 A VCE sat = V typ.

TO-247 AD

C TAB

G = Gate,

C = Collector,

E = Emitter,

TAB = Collector

IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot

VCE sat

VGE th I

IGES QGon

Conditions TVJ = 25°C to 150°C

TC = 25°C TC = 90°C VGE = 0/15 V RG = 22 TVJ = 125°C RBSOA, Clamped inductive load L = 100 µH TC = 25°C

Maximum Ratings
±1200
± 20

Conditions

Characteristic Values

TVJ = 25°C, unless otherwise specified min. typ. max.

IC = 30 A VGE = 15 V TVJ = 25°C TVJ = 125°C

IC = 2 mA VGE = VCE

V CES
25°C

TVJ = 125°C

VCE = 0 V VGE = ± 20 V

VCE = 120V VGE = 15 V IC = 35 A
50 µA
500 nA
• IGBT with NPT non punch through structure
• positive temperature coefficient of saturation voltage
• Epoxy of TO-247 package meets UL 94V-0
- current source inverters - matrix converters - bi-directional switches - resonant converters - induction heating - auxiliary switches for soft switching
in the main current path
0526

IXYS reserves the right to change limits, test conditions and dimensions.
2005 IXYS All rights reserved

IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone +49-6206-503-0, Fax +49-6206-503627

IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone 408 982-0700, Fax 408-496-0670

IXRH 40N120

IGBT
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Datasheet ID: IXRH40N120 644323