IXRH 40N120
Part | Datasheet |
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IXRH40N120 (pdf) |
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IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE sat = V typ. TO-247 AD C TAB G = Gate, C = Collector, E = Emitter, TAB = Collector IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot VCE sat VGE th I IGES QGon Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C VGE = 0/15 V RG = 22 TVJ = 125°C RBSOA, Clamped inductive load L = 100 µH TC = 25°C Maximum Ratings ±1200 ± 20 Conditions Characteristic Values TVJ = 25°C, unless otherwise specified min. typ. max. IC = 30 A VGE = 15 V TVJ = 25°C TVJ = 125°C IC = 2 mA VGE = VCE V CES 25°C TVJ = 125°C VCE = 0 V VGE = ± 20 V VCE = 120V VGE = 15 V IC = 35 A 50 µA 500 nA • IGBT with NPT non punch through structure • positive temperature coefficient of saturation voltage • Epoxy of TO-247 package meets UL 94V-0 - current source inverters - matrix converters - bi-directional switches - resonant converters - induction heating - auxiliary switches for soft switching in the main current path 0526 IXYS reserves the right to change limits, test conditions and dimensions. 2005 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone +49-6206-503-0, Fax +49-6206-503627 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone 408 982-0700, Fax 408-496-0670 IXRH 40N120 IGBT |
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