MOC8204W

MOC8204W Datasheet


4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers

Part Datasheet
MOC8204W MOC8204W MOC8204W (pdf)
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4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers

January 2009
4N38M, H11D1M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers
• High voltage MOC8204M, BVCER = 400V H11D1M, H11D2M, BVCER = 300V H11D3M, BVCER = 200V
• High isolation voltage 7500 VAC peak, 1 second
• Underwriters Laboratory UL recognized File # E90700, Volume 2
• IEC 60747-5-2 approved ordering option V
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs
• Appliance sensor systems
• Industrial controls

The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.

Schematic

Package Outlines

ANODE 1 CATHODE 2

N/C 3
6 BASE 5 COLLECTOR 4 EMITTER
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.

Parameter

Device

TOTAL DEVICE

TSTG Storage Temperature

TOPR Operating Temperature

TSOL Lead Solder Temperature Wave Solder

Total Device Power Dissipation TA = 25°C

Derate Above 25°C

EMITTER

Forward DC Current 1

IF pk Forward Current Peak 1µs pulse, 300pps 1

LED Power Dissipation TA = 25°C 1

Derate Above 25°C

DETECTOR

PD VCER

Power Dissipation TA = 25°C Derate linearly above 25°C

Collector to Emitter Voltage 1

MOC8204M H11D1M, H11D2M

H11D3M

VCBO

Collector Base Voltage 1
4N38M MOC8204M H11D1M, H11D2M

H11D3M

VECO

Emitter to Collector Voltage 1
4N38M

H11D1M, H11D2M, H11D3M,

MOC8204M

Collector Current Continuous

Note Parameters meet or exceed JEDEC registered data for 4N38M only .
Ordering Information

Option No option

S SR2

T V TV SV SR2V

Order Entry Example

H11D1M H11D1SM H11D1SR2M H11D1TM H11D1VM H11D1TVM H11D1SVM H11D1SR2VM

Standard Through Hole Device 50 units per tube Surface Mount Lead Bend Surface Mount Tape and Reel Lead Spacing VDE 0884 VDE 0884, Lead Spacing VDE 0884, Surface Mount VDE 0884, Surface Mount, Tape and Reel

Marking Information

H11D1 2 V X YY Q 6
1 Fairchild logo
2 Device number

VDE mark Note Only appears on parts ordered with VDE option See order entry table
4 One digit year code, e.g., ‘7’
5 Two digit work week ranging from ‘01’ to ‘53’
6 Assembly package code
2007 Fairchild Semiconductor Corporation
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers

Carrier Tape Specification
± ±
± ±

User Direction of Feed

MIN ±

Reflow Profile
300 280 260 240 220 200 180 160 °C 140 120 100
80 60 40 20
260°C
>245°C = 42 Sec

Time above 183°C = 90 Sec
1.822°C/Sec Ramp up rate
33 Sec 60

Time s
2007 Fairchild Semiconductor Corporation
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers

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Datasheet ID: MOC8204W 634427