4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers
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MOC8204SD (pdf) |
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MOC8204S |
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MOC8204 |
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PDF Datasheet Preview |
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4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers January 2009 4N38M, H11D1M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers • High voltage MOC8204M, BVCER = 400V H11D1M, H11D2M, BVCER = 300V H11D3M, BVCER = 200V • High isolation voltage 7500 VAC peak, 1 second • Underwriters Laboratory UL recognized File # E90700, Volume 2 • IEC 60747-5-2 approved ordering option V • Power supply regulators • Digital logic inputs • Microprocessor inputs • Appliance sensor systems • Industrial controls The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Schematic Package Outlines ANODE 1 CATHODE 2 N/C 3 6 BASE 5 COLLECTOR 4 EMITTER 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Parameter Device TOTAL DEVICE TSTG Storage Temperature TOPR Operating Temperature TSOL Lead Solder Temperature Wave Solder Total Device Power Dissipation TA = 25°C Derate Above 25°C EMITTER Forward DC Current 1 IF pk Forward Current Peak 1µs pulse, 300pps 1 LED Power Dissipation TA = 25°C 1 Derate Above 25°C DETECTOR PD VCER Power Dissipation TA = 25°C Derate linearly above 25°C Collector to Emitter Voltage 1 MOC8204M H11D1M, H11D2M H11D3M VCBO Collector Base Voltage 1 4N38M MOC8204M H11D1M, H11D2M H11D3M VECO Emitter to Collector Voltage 1 4N38M H11D1M, H11D2M, H11D3M, MOC8204M Collector Current Continuous Note Parameters meet or exceed JEDEC registered data for 4N38M only . Ordering Information Option No option S SR2 T V TV SV SR2V Order Entry Example H11D1M H11D1SM H11D1SR2M H11D1TM H11D1VM H11D1TVM H11D1SVM H11D1SR2VM Standard Through Hole Device 50 units per tube Surface Mount Lead Bend Surface Mount Tape and Reel Lead Spacing VDE 0884 VDE 0884, Lead Spacing VDE 0884, Surface Mount VDE 0884, Surface Mount, Tape and Reel Marking Information H11D1 2 V X YY Q 6 1 Fairchild logo 2 Device number VDE mark Note Only appears on parts ordered with VDE option See order entry table 4 One digit year code, e.g., ‘7’ 5 Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code 2007 Fairchild Semiconductor Corporation 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers Carrier Tape Specification ± ± ± ± User Direction of Feed MIN ± Reflow Profile 300 280 260 240 220 200 180 160 °C 140 120 100 80 60 40 20 260°C >245°C = 42 Sec Time above 183°C = 90 Sec 1.822°C/Sec Ramp up rate 33 Sec 60 Time s 2007 Fairchild Semiconductor Corporation 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic EfficentMax EZSWITCH * Fairchild FACT Quiet Series FastvCore * FPS F-PFS Global Power ResourceSM Green FPS Green FPS e-Series GTO IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MillerDrive MotionMax Motion-SPM PDP SPM Power-SPM PowerXS Programmable Active Droop QS Quiet Series RapidConfigure Saving our world, 1mW/W/kW at a time SmartMax SMART START STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET |
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