IXKP35N60C5
IXKP35N60C5 Datasheet
IXKH 35N60C5 IXKP 35N60C5
| Part | Datasheet |
|---|---|
IXKP35N60C5 |
IXKP35N60C5 (pdf) |
| PDF Datasheet Preview |
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| Advanced Technical Information IXKH 35N60C5 IXKP 35N60C5 CoolMOS 1 Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge ID25 = 35 A VDSS = 600 V R = DS on max Ω TO-247 AD IXKH TO-220 AB IXKP q D TAB MOSFET VDSS VGS ID25 ID90 EAS EAR dV/dt Conditions TVJ = 25°C TC = 25°C TC = 90°C single pulse repetitive ID = 11 A TC = 25°C MOSFET dV/dt ruggedness VDS = V Maximum Ratings 600 V ± 20 35 A 25 A 800 mJ 50 V/ns RDSon VGS th IDSS IGSS Ciss Coss Qg Qgs Qgd td on tr td off tf RthJC Conditions Characteristic Values TVJ = 25°C, unless otherwise min. typ. max. VGS = 10 V ID = 18 A VDS = VGS ID = mA VDS = 600 V VGS = 0 V VGS = ± 20 V VDS = 0 V VGS = 0 V VDS = 100 V f = 1 MHz TVJ = 25°C TVJ = 125°C VGS = 0 to 10 V VDS = 400 V ID = 18 A VGS = 10 V VDS = 400 V ID = 18 A RG = Ω 2800 130 60 14 20 tbd 5 100 mΩ 10 µA µA |
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