KSC5504DTTU

KSC5504DTTU Datasheet


KSC5504D/KSC5504DT

Part Datasheet
KSC5504DTTU KSC5504DTTU KSC5504DTTU (pdf)
Related Parts Information
KSC5504DTM KSC5504DTM KSC5504DTM
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KSC5504D/KSC5504DT

KSC5504D/KSC5504DT

High Voltage High Speed Power Switch Application
• Wide Safe Operating Area
• Built-in Free-Wheeling Diode
• Suitable for Electronic Ballast Application
• Small Variance in Storage Time
• Two Package Choices D2-PAK or TO-220

Equivalent Circuit C

D2-PAK
1 TO-220
1.Base 2.Collector 3.Emitter

NPN Triple Diffused Planar Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Parameter

VCBO

Collector-Base Voltage

V CEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

Collector Current DC
*Collector Current Pulse

Base Current DC
*Base Current Pulse

Collector Dissipation TC=25°C

Junction Temperature

TSTG

Storage Temperature

Avalanche Energy Tj=25°C
* Pulse Test Pulse Width = 5ms, Duty Cycle 10%

Value 1200 600
12 4 8 2 4 75 150 - 65 ~ 150 3

Units V A W °C °C mJ

Thermal Characteristics TC=25°C unless otherwise noted

Characteristics

Thermal Resistance

Junction to Case

Junction to Ambient

Maximun Lead Temperature for Soldering Purpose
1/8” from Case for 5 seconds

Rating 270

Unit °C/W
2001 Fairchild Semiconductor Corporation

KSC5504D/KSC5504DT
More datasheets: 151-01648 | 151-01643 | 151-01656 | 151-01638 | 151-01642 | 151-01640 | 151-01644 | 151-01667 | 151-01659 | WP115WUM/EGW


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Datasheet ID: KSC5504DTTU 634225