KSC5504DTM
KSC5504DTM Datasheet
KSC5504D/KSC5504DT
| Part | Datasheet |
|---|---|
KSC5504DTM |
KSC5504DTM (pdf) |
| Related Parts | Information |
|---|---|
|
KSC5504DTTU |
KSC5504DTTU |
| PDF Datasheet Preview |
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| KSC5504D/KSC5504DT KSC5504D/KSC5504DT High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free-Wheeling Diode • Suitable for Electronic Ballast Application • Small Variance in Storage Time • Two Package Choices D2-PAK or TO-220 Equivalent Circuit C D2-PAK 1 TO-220 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO Collector-Base Voltage V CEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current DC *Collector Current Pulse Base Current DC *Base Current Pulse Collector Dissipation TC=25°C Junction Temperature TSTG Storage Temperature Avalanche Energy Tj=25°C * Pulse Test Pulse Width = 5ms, Duty Cycle 10% Value 1200 600 12 4 8 2 4 75 150 - 65 ~ 150 3 Units V A W °C °C mJ Thermal Characteristics TC=25°C unless otherwise noted Characteristics Thermal Resistance Junction to Case Junction to Ambient Maximun Lead Temperature for Soldering Purpose 1/8” from Case for 5 seconds Rating 270 Unit °C/W 2001 Fairchild Semiconductor Corporation KSC5504D/KSC5504DT |
| More datasheets: 151-01643 | 151-01656 | 151-01638 | 151-01642 | 151-01640 | 151-01644 | 151-01667 | 151-01659 | WP115WUM/EGW | KSC5504DTTU |
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