IXGK50N60AU1
IXGK50N60AU1 Datasheet
IXGK 50N60AU1
| Part | Datasheet |
|---|---|
IXGK50N60AU1 |
IXGK50N60AU1 (pdf) |
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| HiPerFASTTM IGBT with Diode Combi Pack IXGK 50N60AU1 VCES V CE sat = 600 V = 75 A = V = 275 ns Test Conditions VCES VCGR VGES V IC25 IC90 ICM SSOA RBSOA TJ = 25°C to 150°C TJ = 25°C to 150°C RGE = 1 Continuous Transient TC = 25°C, limited by leads TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 10 Clamped inductive load, L = 30 µH TJ TJM T Md Weight = 25°C Mounting torque M4 Maximum lead temperature for soldering mm in. from case for 10 s Maximum Ratings ±20 ±30 ICM = 100 VCES -55 +150 -55 +150 Nm/lb.in. TO-264 AA G = Gate, E = Emitter, C = Collector, TAB = Collector l International standard package JEDEC TO-264 AA l High frequency IGBT and antiparallel FRED in one package l 2nd generation HDMOSTM process l Low V CE sat - for minimum on-state conduction losses l MOS Gate turn-on - drive simplicity l Fast Recovery Epitaxial Diode FRED - soft recovery with low IRM BV CES VGE th ICES IGES VCE sat Test Conditions Characteristic Values 25°C, |
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