IXGH32N60AU1
IXGH32N60AU1 Datasheet
IXGH 32N60AU1 IXGH 32N60AU1S
| Part | Datasheet |
|---|---|
IXGH32N60AU1 |
IXGH32N60AU1 (pdf) |
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| HiPerFASTTM IGBT with Diode Combi Pack IXGH 32N60AU1 IXGH 32N60AU1S VCES = 600 V IC25 = 60 A VCE sat = 2.9V = 125 ns TO-247 SMD 32N60AU1S Test Conditions Maximum Ratings VCES V VGES V IC25 IC90 I SSOA RBSOA TJ = 25°C to 150°C 25°C 150°C; Continuous Transient TC = 25°C TC = 90°C = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 33 Clamped inductive load, L = 100 µH = 25°C TJ TJM T Maximum Lead and Tab temperature for soldering mm in. from case for 10 s 600 ±20 ±30 60 32 120 ICM = 64 VCES 200 -55 +150 -55 +150 300 Weight Mounting torque, TO-247 AD TO-247 SMD TO-247 AD W °C °C °C °C Nm/lb.in. g BVCES VGE th ICES IGES VCE sat Test Conditions IC = 750µA, VGE = 0 V IC = 250 µA, VCE = VGE VCE = • VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V Characteristic Values TJ = 25°C, unless otherwise specified min. typ. max. TJ = 25°C TJ = 125°C 500 µA 8 mA |
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