IRGP4063D1PBF
IRGP4063D1PBF Datasheet
IRGP4063D1PbF IRGP4063D1-EPbF
| Part | Datasheet |
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IRGP4063D1PBF |
IRGP4063D1PBF (pdf) |
| Related Parts | Information |
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IRGP4063D1-EPBF |
IRGP4063D1-EPBF |
| PDF Datasheet Preview |
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| IRGP4063D1PbF IRGP4063D1-EPbF VCES = 600V IC = 60A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode tSC TJ max = 175°C VCE ON typ. = 1.65V IC = 48A Applica ons • Industrial Motor Drive • Inverters • UPS • Welding n-channel G Gate E C G IRGP4063D1PbF C Collector E Emitter Features Low VCE ON and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE ON temperature coefficient 5µs short circuit SOA Lead-free, RoHS compliant Benefits High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and higher power capability Excellent current sharing in parallel operation Enables short circuit protection scheme Environmentally friendly Base part number IRGP4063D1PbF IRGP4063D1-EPbF Package Type TO-247AC TO-247AD Standard Pack Form Quantity Tube Tube Orderable Part Number IRGP4063D1PbF IRGP4063D1-EPbF Absolute Maximum Ratings Parameter Max. VCES Collector-to-Emitter Voltage IC TC = 25°C Continuous Collector Current IC TC = 100°C Continuous Collector Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V IF TC = 25°C Diode Continous Forward Current IF TC = 100°C Diode Continous Forward Current |
| More datasheets: 81340 | BFR 380T E6327 | 1731110010 | 1731110012 | 1731110009 | 1731110008 | 1731110011 | DDM50SENMBK52 | 112001001 | IRGP4063D1-EPBF |
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