BFR 380T E6327
BFR 380T E6327 Datasheet
BFR380T
| Part | Datasheet |
|---|---|
BFR 380T E6327 |
BFR 380T E6327 (pdf) |
| PDF Datasheet Preview |
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| BFR380T NPN Silicon RF Transistor Preliminary data High current capability and low figure for wide dynamic range application Low voltage operation Ideal for low phase noise oscillators up to GHz Low noise figure dB at GHz 2 1 VPS05996 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR380T Marking Pin Configuration Package SC75 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1 TS 66°C Junction temperature Ambient temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Thermal Resistance Parameter Junction - soldering point2 RthJS 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance Value 6 15 2 80 14 150 -65 150 -65 150 Value Unit V mA mW °C Unit K/W Jul-01-2003 BFR380T Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Values Unit min. typ. max. Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gainIC = 40 mA, VCE = 3 V V BR CEO 6 ICES 10 µA |
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