SPB80N10L G
SPB80N10L G Datasheet
SPI80N10L SPP80N10L,SPB80N10L
| Part | Datasheet |
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SPB80N10L G |
SPB80N10L G (pdf) |
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SPB80N10L |
SPB80N10L |
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| Preliminary data SPI80N10L SPP80N10L,SPB80N10L Power-Transistor N-Channel Enhancement mode Logic Level operating temperature P-TO262-3-1 Avalanche rated dv/dt rated Product Summary 100 V RDS on 14 m P-TO263-3-2 P-TO220-3-1 Type SPP80N10L SPB80N10L SPI80N10L Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Q67042-S4173 Q67042-S4171 Q67042-S4172 Marking 80N10L Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=80 A , VDD=25V, RGS=25 ID puls EAR dv/dt IS=80A, VDS=0V, di/dt=200A/µs Gate source voltage Power dissipation TC=25°C VGS Ptot Operating and storage temperature IEC climatic category DIN IEC 68-1 Tj , Tstg Value Unit kV/µs ±20 +175 55/175/56 2002-08-14 Preliminary data SPI80N10L SPP80N10L,SPB80N10L Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: min. footprint 6 cm2 cooling area 1 Values Unit min. typ. max. RthJC RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max. Static Characteristics |
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