IXFT13N100
IXFT13N100 Datasheet
IXFT 10 N100 IXFT12 N100 IXFT 13 N100
| Part | Datasheet |
|---|---|
IXFT13N100 |
IXFT13N100 (pdf) |
| PDF Datasheet Preview |
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| HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFT 10 N100 IXFT12 N100 IXFT 13 N100 V DSS 1000 V 10 A 1000 V 12 A 1000 V A trr 250 ns R DS on Preliminary data sheet Symbol V VDGR V VGSM ID25 EAR dv/dt Tstg TL Md Weight VDSS VGS th IGSS IDSS RDS on Test Conditions = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150°C, RG = 2 W = 25°C mm in. from case for 10 s Mounting torque Maximum Ratings 10N100 12N100 13N100 10N100 12N100 13N100 10N100 12N100 13N100 1000 ±20 ±30 10 12 40 48 50 10 12 V/ns -55 +150 -55 +150 Nm/lb.in. TO-268 = 6 g Test Conditions Characteristic Values TJ = 25°C, unless otherwise specified min. typ. max. |
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