IRLW510ATM
IRLW510ATM Datasheet
IRLW/I510A
| Part | Datasheet |
|---|---|
IRLW510ATM |
IRLW510ATM (pdf) |
| Related Parts | Information |
|---|---|
IRLI510ATU |
IRLI510ATU |
| PDF Datasheet Preview |
|---|
| 3RZHU 026 7 IRLW/I510A Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175°C Operating Temperature Lower Leakage Current 10µA Max. VDS = 100V Lower RDS ON Typ. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TC=25°C Continuous Drain Current TC=100°C Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation TA=25°C * Total Power Dissipation TC=25°C Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds BVDSS = 100 V RDS on = ID = A D2-PAK I2-PAK Gate Drain Source Value 100 20 ±20 62 37 - 55 to +175 Units V A V mJ A mJ V/ns W/°C Thermal Resistance Characteristic Typ. Junction-to-Case Junction-to-Ambient * Junction-to-Ambient * When mounted on the minimum pad size recommended PCB Mount . Max. 40 Units °C/W 1999 Fairchild Semiconductor Corporation IRLW/I510A |
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