TIP140F/141F/142F
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TIP142FTU (pdf) |
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TIP140F/141F/142F TIP140F/141F/142F Monolithic Construction With Built In BaseEmitter Shunt Resistors • Complement to TIP145F/146F/147F • High DC Current Gain hFE = 1000 VCE = 4V, IC = 5A Min. • Industrial Use NPN Epitaxial Darlington Transistor TO-3PF 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage TIP140F TIP141F TIP142F Value 60 80 100 Units Collector-Emitter Voltage TIP140F VCEO TIP141F TIP142F VEBO IC ICP IB PC TJ TSTG Emitter-Base Voltage Collector Current DC Collector Current Pulse Base Current DC Collector Dissipation TC=25°C Junction Temperature Storage Temperature - 65 ~ 150 Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO sus Parameter Collector-Emitter Sustaining Voltage TIP140F TIP141F TIP142F Test Condition IC = 30mA, IB = 0 ICEO ICBO IEBO hFE VCE sat VBE sat VBE on tD tR tSTG tF Collector Cut-off Current TIP140F TIP141F TIP142F Collector Cut-off Current TIP140F TIP141F TIP142F Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Delay Time Rise Time Storage Time Fall Time VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0 VBE = 5V, IC = 0 VCE = 4V, IC = 5A VCE = 4V, IC = 10A IC = 5A, IB = 10mA IC = 10A, IB = 40mA IC = 10A, IB = 40mA VCE = 4V, IC = 10A VCC = 30V, IC = 5A IB 1= 20mA, IB2 = -20mA RL = 2002 Fairchild Semiconductor Corporation Equivalent Circuit C R1 R2 Min. Typ. Max. Units 1000 500 |
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