IXFC12N80P
IXFC12N80P Datasheet
IXFC 12N80P
| Part | Datasheet |
|---|---|
IXFC12N80P |
IXFC12N80P (pdf) |
| PDF Datasheet Preview |
|---|
| Advance Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM Electrically Isolated Back Surface IXFC 12N80P V = 800 DSS ID25 = RDS on N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Test Conditions ISOPLUS220TM IXFC Maximum Ratings E153432 VDSS VDGR VGS VGSM ID25 IDM EAR EAS TJ = 25° C to 150° C TJ = 25° C to 150° C RGS = 1 Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM = 25° C TC = 25° C TC = 25° C ± 30 ± 40 G = Gate S = Source Isolated back surface D = Drain dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight IS di/dt A/µs, VDD TJ C, RG = 10 TC = 25° C mm in. from case for 10 s Plastic body for 10 s 50/60 Hz, RMS, t = 1, leads-to-tab Mounting Force Test Conditions TJ = 25° C unless otherwise specified BVDSS VGS = 0 V, ID = 250 µA V/ns -55 +150 -55 +150 2500 N/lb Characteristic Values Min. Typ. Max. |
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