MT29F2G08ABDHC-ET:D TR
MT29F2G08ABDHC-ET:D TR Datasheet
MT29F2G08AAD, MT29F2G16AAD, MT29F2G08ABD, MT29F2G16ABD
| Part | Datasheet |
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MT29F2G08ABDHC-ET:D TR |
MT29F2G08ABDHC-ET:D TR (pdf) |
| Related Parts | Information |
|---|---|
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MT29F2G08AADWP:D TR |
MT29F2G08AADWP:D TR |
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MT29F2G08AADWP-ET:D TR |
MT29F2G08AADWP-ET:D TR |
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MT29F2G16ABDHC:D TR |
MT29F2G16ABDHC:D TR |
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MT29F2G16ABDHC-ET:D TR |
MT29F2G16ABDHC-ET:D TR |
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MT29F2G16AADWP-ET:D TR |
MT29F2G16AADWP-ET:D TR |
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MT29F2G16AADWP:D TR |
MT29F2G16AADWP:D TR |
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MT29F2G08ABDHC:D TR |
MT29F2G08ABDHC:D TR |
| PDF Datasheet Preview |
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| Micron Confidential and Proprietary 2Gb x8, x16 NAND Flash Memory Features NAND Flash Memory MT29F2G08AAD, MT29F2G16AAD, MT29F2G08ABD, MT29F2G16ABD • Open NAND Flash Interface ONFI 1.0-compliant • Single-level cell SLC technology • Organization Page size • x8 2,112 bytes 2,048 + 64 bytes • x16 1,056 words 1,024 + 32 words Block size 64 pages 128K + 4K bytes Device size 2Gb 2,048 blocks • READ performance Random READ 25µs Sequential READ 25ns 3.3V Sequential READ 35ns 1.8V • WRITE performance PROGRAM PAGE 220µs TYP, 3.3V PROGRAM PAGE 300µs TYP, 1.8V BLOCK ERASE 500µs TYP • Data retention 10 years • Endurance 100,000 PROGRAM/ERASE cycles • First block address 00h guaranteed to be valid with ECC when shipped from factory1 • Industry-standard basic NAND Flash command set • Advanced command set PROGRAM PAGE CACHE MODE PAGE READ CACHE MODE One-time programmable OTP commands BLOCK LOCK 1.8V only PROGRAMMABLE DRIVE STRENGTH READ UNIQUE ID • Operation status byte provides a software method of detecting Operation completion Pass/fail condition Write-protect status • Ready/busy# R/B# signal provides a hardware method of detecting operation completion • WP# signal write protect entire device • RESET required as first command after power-up • INTERNAL DATA MOVE operations supported • Alternate method of device initialization Nand_Init after power up4 Contact Factory Figure 1 63-Ball VFBGA Options • Density2 2Gb single die • Device width x8, x16 • Configuration: # of die # of CE# # of R/B# I/O Common • VCC: • VCC: • Package 48-pin TSOP type I CPL3 lead-free plating, 3.3V only 63-ball VFBGA lead-free, 1.8V only • Operating temperature: Commercial 0°C to +70°C Extended to +85°C See “Error Management” on page For part numbering and markings, see Figure 2 on page 2 and Figure 3 on page CPL = center parting line Available only in 1.8V VFBGA package. Micron Technology, Inc., reserves the right to change products or specifications without notice. 2007 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. Micron Confidential and Proprietary 2Gb x8, x16 NAND Flash Memory Part Numbering Information Part Numbering Information NAND Flash devices are available in several different configurations and densities see Figure Figure 2 Part Number Chart 3.3V MT 29F 2G 08 A D WP Micron Technology Product Family 29F = Single-supply NAND Flash memory Density 2G = 2Gb Device Width 08 = 8 bits 16 = 16 bits Classification # of die # of CE# # of R/B# I/O 1 Common Operating Voltage Range A = 3.3V Feature Set D = Feature set D Production Status Blank = Production ES = Engineering sample MS = Mechanical sample QS = Qualification sample |
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