IXFT26N50Q TR

IXFT26N50Q TR Datasheet

IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q

Part	Datasheet
IXFT26N50Q TR	IXFT26N50Q TR (pdf)

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HiPerFETTM Power MOSFETs Q-Class IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS 500 V 500 V ID25 24 A 26 A trr 250 ns RDS on Test Conditions Maximum Ratings TO-247 AD IXFH VDSS VDGR V V GSM ID25 IDM IAR EAS dv/dt T stg TL Md Weight VDSS TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 Continuous ±20 Transient ±30 TC = 25°C TC = 25°C, Note 1 TC = 25°C 24N50Q 26N50Q 24N50Q 26N50Q 24N50Q 26N50Q 25°C TC = 25°C IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150°C, RG = 2 TC = 25°C 300 -55 +150 150 -55 +150 mm in from case for 10 s Mounting torque TO-247

PDF Datasheet Preview

HiPerFETTM Power MOSFETs

Q-Class

IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q

N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt

VDSS
500 V 500 V

ID25
24 A 26 A
trr 250 ns

RDS on

Test Conditions

Maximum Ratings TO-247 AD IXFH

VDSS VDGR V

V GSM

ID25 IDM IAR

EAS dv/dt

T stg

TL Md Weight

VDSS

TJ = 25°C to 150°C

TJ = 25°C to 150°C RGS = 1

Continuous
±20

Transient
±30

TC = 25°C TC = 25°C, Note 1 TC = 25°C
24N50Q
26N50Q
24N50Q
26N50Q
24N50Q
26N50Q
25°C

TC = 25°C

IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150°C, RG = 2

TC = 25°C
300 -55 +150
150 -55 +150
mm in from case for 10 s

Mounting torque

TO-247

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Datasheet ID: IXFT26N50QTR 644248