IXFT50N20
IXFT50N20 Datasheet
IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20
| Part | Datasheet |
|---|---|
IXFT50N20 |
IXFT50N20 (pdf) |
| PDF Datasheet Preview |
|---|
| HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 VDSS 200 V 200 V 200 V ID25 42 A 50 A 58 A RDS on 60mW 45mW 40mW trr 200 ns TO-247 AD IXFH VDSS VDGR VGS V ID25 EAR dv/dt PD TJ TJM Tstg T Md Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C di/dt A/ms, V, DSS TJ 150°C, RG = 2 W TC = 25°C mm in. from case for 10 s Mounting torque 42N20 50N20 58N20 42N20 50N20 58N20 42N20 50N20 58N20 ±20 ±30 5 V/ns -55 +150 -55 +150 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g VDSS VGS th IGSS IDSS Test Conditions VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = • VDSS VGS = 0 V Characteristic Values TJ = 25°C, unless otherwise specified min. typ. max. |
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