IPS70R2K0CEE8211
IPS70R2K0CEE8211 Datasheet
IPS70R2K0CE
| Part | Datasheet |
|---|---|
IPS70R2K0CEE8211 |
IPS70R2K0CEE8211 (pdf) |
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| IPS70R2K0CE MOSFET Parameter Value Unit VDS Tj,max RDS on ,max 2000 ID,typ Qg.typ ID,pulse IPS70R2K0CE Package PG-TO 251 Marking 70S2K0CE Drain Pin 2, Tab Gate Pin 1 Source Pin 3 see Appendix A Final Data Sheet IPS70R2K0CE Final Data Sheet IPS70R2K0CE Parameter Continuous drain current1 Pulsed drain current2 Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current, repetitive MOSFET dv/dt ruggedness Gate source voltage static Gate source voltage dynamic Power dissipation Storage temperature Operating junction temperature Continuous diode forward current Diode pulse current2 ID,pulse EAS EAR IAR dv/dt VGS Ptot Tstg Tj IS,pulse dv/dt Maximum diode commutation speed dif/dt Min. -20 -30 -40 -40 - Values Typ. Max. Unit TC=25°C TC=100°C A TC=25°C mJ ID=0.4A VDD=50V see table 10 mJ ID=0.4A VDD=50V see table 10 V/ns VDS=0...480V V static; V AC f>1 Hz W TC=25°C °C - |
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