GWM100-0085X1-SMD
GWM100-0085X1-SMD Datasheet
GWM100-0085X1
| Part | Datasheet |
|---|---|
GWM100-0085X1-SMD |
GWM100-0085X1-SMD (pdf) |
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| Three phase full Bridge with Trench MOSFETs in DCB isolated high current package GWM100-0085X1 VDSS = 85 V ID25 = 103 A R = DSon typ. mW tentative MOSFETs Symbol Conditions VDSS VGS TJ = 25°C to 150°C ID25 TC = 25°C ID90 TC = 90°C ID110 TC = 110°C IF25 TC = 25°C diode IF90 TC = 90°C diode IF110 TC = 110°C diode Maximum Ratings ± 20 103 A 77 A 68 A tbd A tbd A tbd A Symbol Conditions Characteristic Values TJ = 25°C, unless otherwise specified min. typ. max. R 1 DSon VGS th IDSS IGSS on chip level at VGS = 10 ID = 75 A VDS = 20 V ID = 250 µA VDS = VDSS VGS = 0 V VGS = ± 20 V VDS = 0 V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C VGS = 10 V VDS = 42 V ID = 75 A td on tr td off tf Eon Eoff Erecoff Ordering Part Name & Packing Unit Marking Standard GWM 100-0085X1 - SL Standard GWM 100-0085X1 - SMD Part Marking Delivering Mode GWM 100-0085X1 GWM 100-0085X1 Blister Base Qty. 28 IXYS reserves the right to change limits, test conditions and dimensions. 2011 IXYS All rights reserved Ordering Code tbd 20110307 |
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