SPU30N03S2-08
SPU30N03S2-08 Datasheet
SPU30N03S2-08
| Part | Datasheet |
|---|---|
SPU30N03S2-08 |
SPU30N03S2-08 (pdf) |
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| Power-Transistor Feature • N-Channel • Enhancement mode • Low On-Resistance RDS on • Excellent Gate Charge x RDS on product FOM • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated SPU30N03S2-08 Product Summary RDS on P- TO251 -3-1 Type Package Ordering Code Marking SPU30N03S2-08 P- TO251 -3-1 Q67042-S4140 2N0308 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current1 TC=25°C1 Pulsed drain current TC=25°C Avalanche energy, single pulse ID=30 A , VDD=25V, IS=30A, VDS=24V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg Value 30 120 ±20 125 +175 55/175/56 Unit A kV/µs V W °C 2003-04-30 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: min. footprint 6 cm2 cooling area 3 SPU30N03S2-08 Values Unit min. typ. max. RthJC RthJA - 100 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage |
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