DSEC16-04AS

DSEC16-04AS Datasheet

DSEC 16-04AS

Part	Datasheet
DSEC16-04AS	DSEC16-04AS (pdf)

PDF Datasheet Preview
DSEC 16-04AS HiPerFREDTM Epitaxial Diode with common cathode and soft recovery Preliminary Data VRSM V VRRM V Type DSEC 16-04AS IFAV = 2x 10 A VRRM = 400 V trr = 30 ns TO-263 AB C TAB Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Weight RthJC trr Conditions TC = 140°C rectangular, d = TVJ = 45°C tp = 10 ms 50 Hz , sine TVJ = 25°C non-repetitive IAS = 2 A L = 180 µH VA = 1.5•VR typ. f = 10 kHz repetitive TC = 25°C typical Conditions TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 10 A; TVJ = 150°C TVJ = 25°C IF = 1 A -di/dt = 100 A/µs VR = 30 V TVJ = 25°C VR = 100 V IF = 25 A -diF/dt = 100 A/µs TVJ = 100°C Maximum Ratings Characteristic Values typ. max. ● International standard package ● Planar passivated chips ● Very short recovery time ● Extremely low switching losses ● Low IRM-values ● Soft recovery behaviour ● Epoxy meets UL 94V-0 ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode in converters and motor control circuits ● Rectifiers in switch mode power supplies SMPS ● Inductive heating ● Uninterruptible power supplies UPS ● Ultrasonic cleaners and welders Advantages ● Avalanche voltage rated for reliable operation ● Low IRM reduces - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see IXYS Databook 2001 IXYS reserves the right to change limits, Conditions and dimensions. 2002 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone +49-6206-503-0, Fax +49-6206-503627 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone 408 982-0700, Fax 408-496-0670

PDF Datasheet Preview

DSEC 16-04AS

HiPerFREDTM Epitaxial Diode
with common cathode and soft recovery

Preliminary Data

VRSM V

VRRM V

Type DSEC 16-04AS

IFAV = 2x 10 A VRRM = 400 V trr = 30 ns

TO-263 AB

C TAB

Symbol IFRMS IFAVM

IFSM EAS

IAR TVJ TVJM Tstg Ptot Weight

RthJC trr

Conditions

TC = 140°C rectangular, d =

TVJ = 45°C tp = 10 ms 50 Hz , sine TVJ = 25°C non-repetitive IAS = 2 A L = 180 µH VA = 1.5•VR typ. f = 10 kHz repetitive

TC = 25°C typical

Conditions

TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM

IF = 10 A;

TVJ = 150°C TVJ = 25°C

IF = 1 A -di/dt = 100 A/µs VR = 30 V TVJ = 25°C

VR = 100 V IF = 25 A -diF/dt = 100 A/µs TVJ = 100°C

Maximum Ratings

Characteristic Values typ. max.
● International standard package ● Planar passivated chips ● Very short recovery time ● Extremely low switching losses ● Low IRM-values ● Soft recovery behaviour ● Epoxy meets UL 94V-0
● Antiparallel diode for high frequency switching devices
● Antisaturation diode ● Snubber diode ● Free wheeling diode in converters
and motor control circuits ● Rectifiers in switch mode power
supplies SMPS ● Inductive heating ● Uninterruptible power supplies UPS ● Ultrasonic cleaners and welders

Advantages
● Avalanche voltage rated for reliable operation
● Low IRM reduces - Power dissipation within the diode - Turn-on loss in the commutating switch

Dimensions see IXYS Databook 2001

IXYS reserves the right to change limits, Conditions and dimensions.
2002 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone +49-6206-503-0, Fax +49-6206-503627

IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone 408 982-0700, Fax 408-496-0670

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Datasheet ID: DSEC16-04AS 644162