CPC3982TTR

CPC3982TTR Datasheet

CPC3982

Part	Datasheet
CPC3982TTR	CPC3982TTR (pdf)

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INTEGRATED CIRCUITS DIVISION CPC3982 N-Channel Depletion-Mode Vertical DMOS FET V BR DSX / V BR DGX 800V RDS on max IDSS min 20mA Package SOT-23 • High Breakdown Voltage 800V • Low VGS off Voltage -1.4V to -3.1V • Depletion Mode Device Offers Low RDS on at Cold Temperatures • High Input Impedance • Small Package Size SOT-23 • Constant Current Regulator • Ignition Modules • Normally-On Switches • Solid State Relays • Converters • Telecommunications • Power Supply The CPC3982 is an N-channel, depletion mode, field effect transistor FET that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input impedance, for use in high-power applications. The CPC3982 is a highly reliable device that has been used extensively in our Solid State Relays for industrial and telecommunications applications. This device excels in power applications that require low drain-source resistance, particularly in cold environments such as automotive ignition modules. The CPC3982 has a minimum breakdown voltage of 800V, and is available in an SOT-23 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown. Ordering Information Part # CPC3982TTR N-Channel Depletion Mode FET, SOT-23 Pkg. Tape and Reel 3000/Reel Package Pinout SOT-23 Circuit Symbol D DS-CPC3982-R00C INTEGRATED CIRCUITS DIVISION CPC3982 Absolute Maximum Ratings 25ºC Unless Otherwise Noted Parameter Drain-to-Source Voltage Gate-to-Source Voltage Pulsed Drain Current Total Package Dissipation 1 Junction Temperature Operational Temperature Storage Temperature Ratings 800 ±15 150 125 -55 to +110 -55 to +125 Units V mA W ºC ºC ºC Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied. 1 Mounted on 1"x1" 2 oz. Copper FR4 board. Electrical Characteristics 25ºC Unless Otherwise Noted Source-Drain Diode Voltage Drop Thermal Resistance, Junction to Ambient BVDSX VGS off dVGS off /dT IGSS ID off IDSS RDS on dRDS on /dT GFS CISS COSS CRSS Conditions VGS= -5V, ID=100µA VDS= 15V, VDS= 15V, VGS=±15V, VDS=0V VGS= -5V, VDS=800V VGS= 0V, VDS=15V VGS= 0V, ID=20mA, VDS=10V ID= 10mA, VDS = 10V VGS= -3.5V VDS= 25V f= 1MHz VGS= -5V, ISD=5mA - Min Typ Max Units mV/ºC - 100 nA - 380 %/ºC - ºC/W R00C INTEGRATED CIRCUITS DIVISION PERFORMANCE DATA Unless Otherwise Noted * CPC3982 ID mA gm mS ID mA 25 20 15 10 Input Admittance VDS=10V VGS V Transconductance vs. Drain Current VDS=10V ID mA 30 25 20 15 10 Output Characteristics

PDF Datasheet Preview

INTEGRATED CIRCUITS DIVISION

CPC3982

N-Channel Depletion-Mode Vertical DMOS FET

V BR DSX / V BR DGX
800V

RDS on max

IDSS min 20mA

Package SOT-23
• High Breakdown Voltage 800V
• Low VGS off Voltage -1.4V to -3.1V
• Depletion Mode Device Offers Low RDS on
at Cold Temperatures
• High Input Impedance
• Small Package Size SOT-23
• Constant Current Regulator
• Ignition Modules
• Normally-On Switches
• Solid State Relays
• Converters
• Telecommunications
• Power Supply

The CPC3982 is an N-channel, depletion mode, field effect transistor FET that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input impedance, for use in high-power applications. The CPC3982 is a highly reliable device that has been used extensively in our Solid State Relays for industrial and telecommunications applications.

This device excels in power applications that require low drain-source resistance, particularly in cold environments such as automotive ignition modules.

The CPC3982 has a minimum breakdown voltage of 800V, and is available in an SOT-23 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown.
Ordering Information

Part # CPC3982TTR

N-Channel Depletion Mode FET, SOT-23 Pkg. Tape and Reel 3000/Reel

Package Pinout

SOT-23

Circuit Symbol D

DS-CPC3982-R00C

INTEGRATED CIRCUITS DIVISION

CPC3982

Absolute Maximum Ratings 25ºC Unless Otherwise Noted

Parameter Drain-to-Source Voltage Gate-to-Source Voltage Pulsed Drain Current Total Package Dissipation 1 Junction Temperature Operational Temperature Storage Temperature

Ratings 800 ±15 150 125
-55 to +110 -55 to +125

Units V mA W ºC ºC ºC

Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied.
1 Mounted on 1"x1" 2 oz. Copper FR4 board.

Electrical Characteristics 25ºC Unless Otherwise Noted

Source-Drain Diode Voltage Drop Thermal Resistance, Junction to Ambient

BVDSX VGS off dVGS off /dT IGSS ID off IDSS RDS on dRDS on /dT GFS CISS COSS CRSS

Conditions VGS= -5V, ID=100µA VDS= 15V, VDS= 15V, VGS=±15V, VDS=0V VGS= -5V, VDS=800V VGS= 0V, VDS=15V

VGS= 0V, ID=20mA, VDS=10V

ID= 10mA, VDS = 10V VGS= -3.5V VDS= 25V f= 1MHz

VGS= -5V, ISD=5mA -

Min Typ Max Units
mV/ºC
- 100 nA
- 380
%/ºC
- ºC/W

R00C

INTEGRATED CIRCUITS DIVISION

PERFORMANCE DATA Unless Otherwise Noted *

CPC3982

ID mA gm mS ID mA
25 20 15 10

Input Admittance VDS=10V

VGS V

Transconductance vs. Drain Current VDS=10V

ID mA
30 25 20 15 10

Output Characteristics

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Datasheet ID: CPC3982TTR 644122