CPC3909CTR

CPC3909CTR Datasheet

CPC3909

Part	Datasheet
CPC3909CTR	CPC3909CTR (pdf)

Related Parts	Information
CPC3909ZTR	CPC3909ZTR

PDF Datasheet Preview
INTEGRATED CIRCUITS DIVISION CPC3909 400V N-Channel Depletion-Mode FET Parameter Drain-to-Source Voltage - V BR DSX Max On-Resistance - RDS on Max Power SOT-89 Package SOT-223 Package Rating 400 9 Units V • 400V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS on at Cold Temperatures • Low On-Resistance Typical 25°C • Low VGS off Voltage • High Input Impedance • Low Input and Output Leakage • Small Package Size SOT-89 and SOT-223 • PC Card PCMCIA Compatible • PCB Space and Cost Savings • LED Drive Circuits • Telecommunications • Normally On Switches • Ignition Modules • Converters • Security • Power Supplies • Regulators The CPC3909 is an N-channel, depletion mode Field Effect Transistor FET that is available in an SOT-223 package CPC3909Z and an SOT-89 package CPC3909C . Both utilize IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process that realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a highly reliable device, particularly for use in difficult application environments such as telecommunications, security, and power supplies. CPC3909Z and the CPC3909C have a typical on-resistance of and a drain-to-source voltage of 400V. As with all MOS devices, the FET structure prevents thermal runaway and thermally induced secondary breakdown. Ordering Information Part Number CPC3909CTR CPC3909ZTR Description SOT-89 Tape and Reel 1000/Reel SOT-223 Tape and Reel 1000/Reel Circuit Symbol Package Pinout: 4 123 Pin Number 1 2 3 4 Name GATE DRAIN SOURCE DRAIN DS-CPC3909-R00C INTEGRATED CIRCUITS DIVISION CPC3909 Absolute Maximum Ratings 25ºC Parameter Ratings Units Drain-to-Source Voltage V BR DSX Gate-to-Source Voltage VGS Total Package Dissipation 1 SOT-89 SOT-223 Operational Temperature Storage Temperature -40 to +110 oC -40 to +125 oC 1 Mounted on 1"x1" FR4 board. Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied. Electrical Characteristics Unless Otherwise Specified Parameter Gate-to-Source Off Voltage Drain-to-Source Leakage Current Drain Current On-Resistance Gate Leakage Current Gate Capacitance Symbol VGS off IDS off ID RDS on IGSS CISS Conditions VDS=10V, VDS=100V VGS= -5V, VDS=210V VGS= -5V, VDS=400V VGS= 0V, VDS=5V VGS= 0V, IDS=300mA VGS=15V VDS= VGS=0V Typ Max Units Thermal Resistance Package Parameter SOT-89 Junction to Case Junction to Ambient SOT-223 Junction to Case

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INTEGRATED CIRCUITS DIVISION

CPC3909
400V N-Channel Depletion-Mode FET

Parameter Drain-to-Source Voltage - V BR DSX Max On-Resistance - RDS on Max Power

SOT-89 Package

SOT-223 Package

Rating 400 9

Units V
• 400V Drain-to-Source Voltage
• Depletion Mode Device Offers Low RDS on
at Cold Temperatures
• Low On-Resistance Typical 25°C
• Low VGS off Voltage
• High Input Impedance
• Low Input and Output Leakage
• Small Package Size SOT-89 and SOT-223
• PC Card PCMCIA Compatible
• PCB Space and Cost Savings
• LED Drive Circuits
• Telecommunications
• Normally On Switches
• Ignition Modules
• Converters
• Security
• Power Supplies
• Regulators

The CPC3909 is an N-channel, depletion mode Field Effect Transistor FET that is available in an SOT-223 package CPC3909Z and an SOT-89 package CPC3909C . Both utilize IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process that realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a highly reliable device, particularly for use in difficult application environments such as telecommunications, security, and power supplies.

CPC3909Z and the CPC3909C have a typical on-resistance of and a drain-to-source voltage of 400V. As with all MOS devices, the FET structure prevents thermal runaway and thermally induced secondary breakdown.
Ordering Information

Part Number CPC3909CTR CPC3909ZTR

Description SOT-89 Tape and Reel 1000/Reel SOT-223 Tape and Reel 1000/Reel

Circuit Symbol

Package Pinout:
4 123

Pin Number 1 2 3 4

Name GATE DRAIN SOURCE DRAIN

DS-CPC3909-R00C

INTEGRATED CIRCUITS DIVISION

CPC3909

Absolute Maximum Ratings 25ºC

Parameter

Ratings Units

Drain-to-Source Voltage V BR DSX Gate-to-Source Voltage VGS Total Package Dissipation 1

SOT-89 SOT-223 Operational Temperature Storage Temperature
-40 to +110 oC -40 to +125 oC
1 Mounted on 1"x1" FR4 board.

Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied.

Electrical Characteristics Unless Otherwise Specified

Parameter Gate-to-Source Off Voltage

Drain-to-Source Leakage Current

Drain Current On-Resistance Gate Leakage Current Gate Capacitance

Symbol VGS off

IDS off

ID RDS on IGSS CISS

Conditions

VDS=10V, VDS=100V

VGS= -5V, VDS=210V

VGS= -5V, VDS=400V

VGS= 0V, VDS=5V

VGS= 0V, IDS=300mA

VGS=15V

VDS= VGS=0V

Typ Max Units

Thermal Resistance

Package

Parameter

SOT-89 Junction to Case

Junction to Ambient

SOT-223 Junction to Case

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived CPC3909CTR Datasheet file may be downloaded here without warranties.

Datasheet ID: CPC3909CTR 644121