MMBT3906K

MMBT3906K Datasheet

MMBT3906K PNP Epitaxial Silicon Transistor

Part	Datasheet
MMBT3906K	MMBT3906K (pdf)

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MMBT3906K PNP Epitaxial Silicon Transistor MMBT3906K PNP Epitaxial Silicon Transistor General Purpose Transistor Marking SOT-23 1 Base Emitter Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ, TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction and Storage Temperature Range Value -40 -40 -5 -200 350 -55 ~ 150 Units V mA mW °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICEX hFE Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage * Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain * VCE sat Collector-Emitter Saturation Voltage * VBE sat Base-Emitter Saturation Voltage * Current Gain Bandwidth Product Output Capacitance Noise Figure IC = -10µA, IE = 0 IC = -1.0mA, IB = 0 IE = 10µA, IC = 0 VCE = -30V, VEB = -3V VCE = -1V, IC = -0.1mA VCE = -1V, IC = -1mA VCE = -1V, IC = -10mA VCE = -1V, IC = -50mA VCE = -1V, IC = -100mA IC = -10mA, IB = -1mA IC = -50mA, IB = -5.0mA IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA IC = -10mA, VCE = -20V, f = 100MHz VCB= -5V, IE=0, f=1.0MHz IC = -100µA, VCE = -5V, RS = f = 10Hz to 15.7KHz Turn On Time tOFF Turn Off Time * Pulse Test Pulse Duty VCC = -3V, VBE = -0.5V IC = -10mA, IB1 = -1mA VCC = -3V, IC = -10mA, IB1 = IB2 = -1mA Min.

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MMBT3906K PNP Epitaxial Silicon Transistor

MMBT3906K

PNP Epitaxial Silicon Transistor

General Purpose Transistor

Marking

SOT-23 1 Base Emitter Collector

Absolute Maximum Ratings Ta = 25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC PC TJ, TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction and Storage Temperature Range

Value
-40 -40 -5 -200 350 -55 ~ 150

Units

V mA mW °C

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO BVEBO ICEX hFE

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage * Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain *

VCE sat Collector-Emitter Saturation Voltage *

VBE sat Base-Emitter Saturation Voltage *

Current Gain Bandwidth Product

Output Capacitance

Noise Figure

IC = -10µA, IE = 0

IC = -1.0mA, IB = 0

IE = 10µA, IC = 0

VCE = -30V, VEB = -3V

VCE = -1V, IC = -0.1mA VCE = -1V, IC = -1mA VCE = -1V, IC = -10mA VCE = -1V, IC = -50mA VCE = -1V, IC = -100mA

IC = -10mA, IB = -1mA IC = -50mA, IB = -5.0mA

IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA

IC = -10mA, VCE = -20V, f = 100MHz

VCB= -5V, IE=0, f=1.0MHz

IC = -100µA, VCE = -5V, RS = f = 10Hz to 15.7KHz

Turn On Time
tOFF

Turn Off Time
* Pulse Test Pulse Duty

VCC = -3V, VBE = -0.5V IC = -10mA, IB1 = -1mA

VCC = -3V, IC = -10mA, IB1 = IB2 = -1mA

Min.

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Datasheet ID: MMBT3906K 634405