FYAF3045DNTU
FYAF3045DNTU Datasheet
FYAF3045DN
| Part | Datasheet |
|---|---|
FYAF3045DNTU |
FYAF3045DNTU (pdf) |
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| FYAF3045DN FYAF3045DN • Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-voltage protection • Switched mode power supply • Freewheeling diodes TO-3PF Anode 2.Cathode Anode SCHOTTKY BARRIER RECTIFIER Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VRRM VR IF AV IFSM Average Rectified Forward Current TC = 105°C Non-repetitive Peak Surge Current per diode 60Hz Single Half-Sine Wave TJ, TSTG Operating Junction and Storage Temperature Thermal Characteristics Parameter Maximum Thermal Resistance, Junction to Case per diode Electrical Characteristics per diode Symbol VFM * IRM * Parameter Maximum Instantaneous Forward Voltage IF = 15A IF = 15A IF = 30A IF = 30A * Pulse Test Pulse Width=300µs, Duty Cycle=2% TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C Value 45 30 300 -65 to +150 Value Value 1 120 Units V A °C Units °C/W Units V 2002 Fairchild Semiconductor Corporation FYAF3045DN Typical Characteristics Forward Current, I F[A] TJ=125 oC TJ=75 oC TJ=25 oC Forward Voltage Drop, VF[V] Figure Typical Forward Voltage Characteristics per diode |
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