CPC3720C

CPC3720C Datasheet

CPC3720

Part	Datasheet
CPC3720C	CPC3720C (pdf)

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INTEGRATED CIRCUITS DIVISION CPC3720 N-Channel Depletion-Mode FET V BR DSX / V BR DGX 350VP RDS on max IDSS min 130mA Package SOT-89 • Offers Low RDS on at Cold Temperatures • RDS on max. at 25ºC • High Input Impedance • High Breakdown Voltage 350VP • Low VGS off Voltage to -3.9V • Small Package Size SOT-89 • Ignition Modules • Normally-On Switches • Solid State Relays • Converters • Telecommunications • Power Supply The CPC3720 is an N-channel, depletion mode, field effect transistor FET that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input impedance, for use in high power applications. The CPC3720 is a highly reliable FET device that has been used extensively in our solid state relays for industrial and telecommunications applications. This device excels in power applications requiring low drain-source resistance, particularly in cold environments such as automotive ignition modules. The CPC3720 offers a low, maximum, on-state resistance at 25ºC. The CPC3720 has a minimum breakdown voltage of 350VP , and is available in an SOT-89 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown. Ordering Information Part # CPC3720C N-Channel Depletion Mode FET, SOT-89 Pkg. Cut-Tape, Available in Quantities of 200, 400, 600, and 800 Only see Note 1 CPC3720CTR N-Channel Depletion Mode FET, SOT-89 Pkg. Tape and Reel 1000/Reel Note 1 Orders for 1000 or greater must be for the "CTR" part option and in increments of Package Pinout SOT-89 Circuit Symbol D DS-CPC3720-R00G INTEGRATED CIRCUITS DIVISION CPC3720 Absolute Maximum Ratings 25ºC Parameter Drain-to-Source Voltage Gate-to-Source Voltage Pulsed Drain Current Total Package Dissipation Junction Temperature Operational Temperature Storage Temperature 1 Mounted on FR4 board 1"x1"x0.062" Ratings 350 ±15 600 1 150 -55 to +125 -55 to +125 Units VP mA W ºC ºC ºC Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied. Electrical Characteristics 25ºC Unless Otherwise Noted Parameter Conditions Drain-to-Source Breakdown Voltage Gate-to-Source Off Voltage Change in VGS off with Temperatures Gate Body Leakage Current Drain-to-Source Leakage Current V BR DSX VGS off dVGS off /dT IGSS ID off IDSS RDS on dRDS on /dT GFS CISS COSS CRSS td on tr td off tf VSD VGS= -5V, ID=100µA VDS= 5V, ID=1mA VDS= 5V, VGS=±15V, VDS=0V VGS= -5V, VDS=350V VGS= -5V, VDS=280V, TA=125ºC VGS= 0V, VDS=15V VGS= 0V, ID=130mA VGS= 0V, ID=130mA ID= 100mA, VDS = 10V VGS= -5V VDS= 25V f= 1MHz VDD= 25V ID= 150mA VGS= 0V to -10V Rgen= VGS= -5V, ISD= 150mA - Min Typ Max Units mV/ºC - 100 nA %/ºC 70 350 10 60

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INTEGRATED CIRCUITS DIVISION

CPC3720

N-Channel Depletion-Mode FET

V BR DSX / V BR DGX
350VP

RDS on max

IDSS min 130mA

Package SOT-89
• Offers Low RDS on at Cold Temperatures
• RDS on max. at 25ºC
• High Input Impedance
• High Breakdown Voltage 350VP
• Low VGS off Voltage to -3.9V
• Small Package Size SOT-89
• Ignition Modules
• Normally-On Switches
• Solid State Relays
• Converters
• Telecommunications
• Power Supply

The CPC3720 is an N-channel, depletion mode, field effect transistor FET that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input impedance, for use in high power applications. The CPC3720 is a highly reliable FET device that has been used extensively in our solid state relays for industrial and telecommunications applications.

This device excels in power applications requiring low drain-source resistance, particularly in cold environments such as automotive ignition modules. The CPC3720 offers a low, maximum, on-state resistance at 25ºC.

The CPC3720 has a minimum breakdown voltage of 350VP , and is available in an SOT-89 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown.
Ordering Information

Part #

CPC3720C

N-Channel Depletion Mode FET, SOT-89 Pkg. Cut-Tape, Available in Quantities of 200, 400, 600, and 800 Only see Note 1

CPC3720CTR

N-Channel Depletion Mode FET, SOT-89 Pkg. Tape and Reel 1000/Reel

Note 1 Orders for 1000 or greater must be for the "CTR" part option and in increments of

Package Pinout

SOT-89

Circuit Symbol D

DS-CPC3720-R00G

INTEGRATED CIRCUITS DIVISION

CPC3720

Absolute Maximum Ratings 25ºC

Parameter Drain-to-Source Voltage Gate-to-Source Voltage Pulsed Drain Current Total Package Dissipation Junction Temperature Operational Temperature Storage Temperature
1 Mounted on FR4 board 1"x1"x0.062"

Ratings 350 ±15 600 1 150
-55 to +125 -55 to +125

Units VP mA W ºC ºC ºC

Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied.

Electrical Characteristics 25ºC Unless Otherwise Noted

Parameter

Conditions

Drain-to-Source Breakdown Voltage Gate-to-Source Off Voltage Change in VGS off with Temperatures Gate Body Leakage Current

Drain-to-Source Leakage Current

V BR DSX VGS off dVGS off /dT IGSS

ID off

IDSS RDS on dRDS on /dT

GFS CISS COSS CRSS td on
tr td off
tf VSD

VGS= -5V, ID=100µA VDS= 5V, ID=1mA VDS= 5V, VGS=±15V, VDS=0V VGS= -5V, VDS=350V VGS= -5V, VDS=280V, TA=125ºC VGS= 0V, VDS=15V VGS= 0V, ID=130mA VGS= 0V, ID=130mA ID= 100mA, VDS = 10V

VGS= -5V VDS= 25V f= 1MHz

VDD= 25V ID= 150mA VGS= 0V to -10V Rgen=

VGS= -5V, ISD= 150mA -

Min Typ Max Units
mV/ºC
- 100 nA
%/ºC
70 350
10 60

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Datasheet ID: CPC3720C 644119