KST4126
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KST4126MTF (pdf) |
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KST4126 KST4126 General Purpose Transistor SOT-23 1 Base Emitter Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TSTG RTH j-a Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature Thermal Resistance junction to Ambient Value -25 -25 -4 -200 350 150 357 Units V mA mW °C °C/W Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition Min. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -10µA, IE=0 BVCEO * Collector-Emitter Breakdown Voltage IC= -1mA, IE=0 BVEBO Emitter-Base Breakdown Voltage IE= -10µA, IC=0 ICBO Collector Cut-off Current VCB= -20V, IE=0 IEBO Emitter Cut-off Current VBE= -3V, IC=0 * DC Current Gain VCE= -1V, IC= -2mA VCE= -1V, IC= -50mA VCE sat * Collector-Emitter Saturation Voltage IC= -50mA, IB= -5mA VBE sat * Base-Emitter Saturation Voltage IC= -50mA, IB= -5mA Current Gain Bandwidth Product VCE= -20V, IC= -10mA, f=100MHz Input Capacitance VBE= -0.5V, IC=0, f=1MHz Output Capacitance VCB= -5V, IE=0, f=1MHz |
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