KST4126MTF

KST4126MTF Datasheet


KST4126

Part Datasheet
KST4126MTF KST4126MTF KST4126MTF (pdf)
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KST4126

KST4126

General Purpose Transistor

SOT-23 1 Base Emitter Collector

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC PC TSTG RTH j-a

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature Thermal Resistance junction to Ambient

Value -25 -25 -4 -200 350 150 357

Units V mA
mW °C °C/W

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

Min. Max. Units

BVCBO

Collector-Base Breakdown Voltage

IC= -10µA, IE=0

BVCEO
* Collector-Emitter Breakdown Voltage IC= -1mA, IE=0

BVEBO

Emitter-Base Breakdown Voltage

IE= -10µA, IC=0

ICBO

Collector Cut-off Current

VCB= -20V, IE=0

IEBO

Emitter Cut-off Current

VBE= -3V, IC=0
* DC Current Gain

VCE= -1V, IC= -2mA VCE= -1V, IC= -50mA

VCE sat * Collector-Emitter Saturation Voltage IC= -50mA, IB= -5mA

VBE sat * Base-Emitter Saturation Voltage

IC= -50mA, IB= -5mA

Current Gain Bandwidth Product

VCE= -20V, IC= -10mA, f=100MHz

Input Capacitance

VBE= -0.5V, IC=0, f=1MHz

Output Capacitance

VCB= -5V, IE=0, f=1MHz
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Datasheet ID: KST4126MTF 634275