IRLR8103

IRLR8103 Datasheet

IRLR8103/IRLRP8D -59308339 IRLR8103/IRLR8503

Part	Datasheet
IRLR8103	IRLR8103 (pdf)

Related Parts	Information
IRLR8103TR	IRLR8103TR

PDF Datasheet Preview
PD - 93838 IRLR8103/IRLRP8D -59308339 IRLR8103/IRLR8503 Provisional Data Sheet • N-Channel Application-Specific MOSFETs • Ideal for CPU Core DC-DC Converters • Low Conduction Losses • Low Switching Losses • Minimizes Parallel MOSFETs for high current Chipset for DC-DC Converters These new devices employ advanced power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. D-Pak Both the IRLR8103 and IRLR8503 have been optimized and are 100% tested for all parameters that are critical in synchronous buck converters including RDS on , gate charge and Cdv/dt-induced turn-on immunity.The IRLR8103 offers particulary low RDS on and high Cdv/dt immunity for synchronous FET applications. The IRLR8503 offers an extremely low combination of Qsw & RDS on for reduced losses in control FET applications. The package is designed for vapor phase, infrared, convection, or wave soldering techniques. Power dissipation of greater than 80W is possible in a typical PCB mount application. DEVICE RATINGS typ. VDS RDS on QG Qsw Q IRLR8103 30V 6 45 nC nC 23 nC IRLR8503 30V 12 15 nC 23 nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current VGS 10V Pulsed Drain TA = 25°C TL = 90°C Power Dissipation TA = 25°C T = 90°C L Junction & Storage Temperature Range Continuous Source Current Body Diode Pulsed Source Symbol VDS VGS ID IDM PD T ,T J STG I S ISM IRLR8103 IRLR8503 ±20 to 150 Units V A W °C A

PDF Datasheet Preview

PD - 93838

IRLR8103/IRLRP8D -59308339 IRLR8103/IRLR8503

Provisional Data Sheet
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Minimizes Parallel MOSFETs for high current

Chipset for DC-DC Converters

These new devices employ advanced power

MOSFET technology to achieve an unprecedented balance
of on-resistance and gate charge. The reduced conduction
and switching losses make them ideal for high efficiency

DC-DC converters that power the latest generation of
microprocessors.

D-Pak

Both the IRLR8103 and IRLR8503 have been optimized and are 100% tested for all parameters that are critical in synchronous buck converters including RDS on , gate charge and Cdv/dt-induced turn-on immunity.The IRLR8103 offers particulary low RDS on and high Cdv/dt immunity for synchronous FET applications. The IRLR8503 offers an extremely low combination of Qsw & RDS on for reduced losses in control FET applications.

The package is designed for vapor phase, infrared, convection, or wave soldering techniques. Power dissipation of greater than 80W is possible in a typical PCB mount application.

DEVICE RATINGS typ.

VDS RDS on QG Qsw Q

IRLR8103 30V 6 45 nC
nC 23 nC

IRLR8503 30V
12 15 nC 23 nC

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain or Source Current VGS 10V Pulsed Drain

TA = 25°C TL = 90°C

Power Dissipation

TA = 25°C

T = 90°C L

Junction & Storage Temperature Range

Continuous Source Current Body Diode

Pulsed Source

Symbol VDS VGS ID

IDM PD

T ,T J STG I S ISM

IRLR8103

IRLR8503
±20
to 150

Units V

A W °C A

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived IRLR8103 Datasheet file may be downloaded here without warranties.

Datasheet ID: IRLR8103 639097