IRGBF20F

IRGBF20F Datasheet

IRGBF20F

Part	Datasheet
IRGBF20F	IRGBF20F (pdf)

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INSULATED GATE BIPOLAR TRANSISTOR PD - 9.776A IRGBF20F Fast Speed IGBT • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve n-channel Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. VCES = 900V VCE sat 4.3V = 15V, IC = 5.3A Absolute Maximum Ratings VCES IC TC = 25°C IC TC = 100°C ICM ILM VGE EARV PD TC = 25°C PD TC = 100°C TJ TSTG TO-220AB Max. 900 18 ±20 60 24 -55 to +150 300 in. 1.6mm from case 10 lbf•in 1.1N•m Units V A V mJ W Thermal Resistance Parameter Junction-to-Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight C-237 Min. Typ. Max. 80 Units °C/W g oz IRGBF20F Electrical Characteristics TJ = 25°C unless otherwise specified V BR CES V BR ECS VCE on Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE th gfe ICES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current IGES Gate-to-Emitter Leakage Current Min. Typ. Max. Units Conditions 900 V VGE = 0V, IC = 250µA 20 V VGE = 0V, IC = 1.0A V/°C VGE = 0V, IC = 1.0mA IC = 5.3A VGE = 15V V IC = 9.0A See Fig. 2, 5

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INSULATED GATE BIPOLAR TRANSISTOR

PD - 9.776A

IRGBF20F

Fast Speed IGBT
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency 1 to
10kHz See Fig. 1 for Current vs. Frequency curve
n-channel

Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.

VCES = 900V VCE sat 4.3V
= 15V, IC = 5.3A

Absolute Maximum Ratings

VCES IC TC = 25°C IC TC = 100°C ICM ILM VGE EARV PD TC = 25°C PD TC = 100°C TJ TSTG

TO-220AB

Max. 900 18 ±20 60 24 -55 to +150
300 in. 1.6mm from case 10 lbf•in 1.1N•m

Units V A

V mJ W

Thermal Resistance

Parameter Junction-to-Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight

C-237

Min.

Typ.

Max. 80

Units °C/W g oz

IRGBF20F

Electrical Characteristics TJ = 25°C unless otherwise specified

V BR CES V BR ECS VCE on

Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage

VGE th gfe ICES

Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current

IGES

Gate-to-Emitter Leakage Current

Min. Typ. Max. Units

Conditions
900 V VGE = 0V, IC = 250µA
20 V VGE = 0V, IC = 1.0A

V/°C VGE = 0V, IC = 1.0mA

IC = 5.3A

VGE = 15V

V IC = 9.0A

See Fig. 2, 5

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Datasheet ID: IRGBF20F 639067