IRGB4062DPBF
IRGB4062DPBF Datasheet
IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF
| Part | Datasheet |
|---|---|
IRGB4062DPBF |
IRGB4062DPBF (pdf) |
| Related Parts | Information |
|---|---|
IRGP4062D-EPBF |
IRGP4062D-EPBF |
IRGP4062DPBF |
IRGP4062DPBF |
| PDF Datasheet Preview |
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| IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE • Low VCE ON Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 uS short circuit SOA • Square RBSOA • 100% of the parts tested for ILM • Positive VCE ON Temperature co-efficient • Ultra fast soft Recovery Co-Pak Diode n-channel • Tight parameter distribution • Lead Free Package VCES = 600V IC = 24A, TC = 100°C tSC TJ max = 175°C VCE on typ. = 1.65V • High Efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to Low VCE ON and Low Switching losses • Rugged transient Performance for increased reliability • Excellent Current sharing in parallel operation • Low EMI TO-220AB IRGB4062DPbF G Gate TO-247AC TO-247AD IRGP4062DPbF IRGP4062D-EPbF C Collector E Emitter Absolute Maximum Ratings Pa ra m e te r V CES IC TC = 25°C IC TC = 100°C ICM IL M Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V c Clamped Inductive Load Current, VGE = 20V IF TC = 25°C IF TC = 100°C IFM V GE Diode Continous Forward Current Diode Continous Forward Current e Diode Maximum Forward Current Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage PD TC = 25°C PD TC = 100°C TJ TST G Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Max. 600 48 24 72 96 48 24 96 ±20 ±30 250 125 -55 to +175 300 in. 1.6mm from case 10 lbf•in N•m Units V V W °C Thermal Resistance Pa ra m e te r R JC IGBT R JC Diode R JC IGBT R JC Diode R CS R JA Thermal Resistance Junction-to-Case- each IGBT TO-220AB Thermal Resistance Junction-to-Case- each Diode TO-220AB Thermal Resistance Junction-to-Case- each IGBT TO-247 Thermal Resistance Junction-to-Case- each Diode TO-247 Thermal Resistance, Case-to-Sink flat, greased surface Thermal Resistance, Junction-to-Ambient typical socket mount |
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