PTF141501E V1

PTF141501E V1 Datasheet

PTF141501E

Part	Datasheet
PTF141501E V1	PTF141501E V1 (pdf)

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PTF141501E Thermally-Enhanced High Power RF LDMOS FET 150 W, 1450 1500 MHz, 1600 1700 MHz The PTF141501E is a 150-watt, GOLDMOS FET intended for DAB applications. This device is characterized for Digital Audio Broadcast operation in the 1450 to 1500 MHz band. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. DAB Drive-up at 28 Volts VDD = 28 V, f = 1500 MHz, IDQ = A, DAB mode 2 Drain Efficiency % Spectral Regrowth dBc 25 20 Efficiency 15 -30 Regrowth 10 20 30 40 50 60 Output Power W Average RF Characteristics PTF141501E Package H-30260-2 • Thermally-enhanced package, pB-free and RoHS-compliant • Broadband internal matching • Typical DAB Mode 2 performance at 1500 MHz, 32 V - Average output power = 50 W - Efficiency = 28% - Spectral regrowth = dBc - 975 kHz fC • Typical DAB Mode 2 performance at 1500 MHz, 28 V - Average output power = 40 W - Efficiency = 26% - Spectral regrowth = dBc - 975 kHz fC • Typical CW performance, 1500 MHz, 28 V - Minimum output power = 150 W - Linear gain = dB - Efficiency = 48% at • Integrated ESD protection Human Body Model, Class 1 minimum • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR at 28 V, 150 W CW output power DAB Measurements not subject to production by design/characterization in Infineon test fixture VDD = 32 V, IDQ = A, POUT = 50 WAVG, f = 1500 MHz, DAB Mode 2, fC 975 kHz Characteristic Symbol Min Typ Spectral Regrowth RGTH Unit dBc Gain Drain Efficiency All published data at TCASE = 25°C unless otherwise indicated See Infineon distributor for future availability. ESD Electrostatic discharge sensitive handling precautions! Data Sheet 1 of 12 PTF141501E RF Characteristics cont. Two-Tone Measurements tested in Infineon test fixture VDD = 28 V, IDQ = A, POUT = 150 WPEP, f = 1500 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Gain Drain Efficiency Intermodulation Distortion Unit dB % dBc DC Characteristics Characteristic Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current Conditions VGS = 0 V, ID = 10 µA VDS = 28 V, VGS = 0 V VGS = 10 V, VDS = V VDS = 28 V, IDQ = A VGS = +10 V, VDS = 0 V Ordering Information Type PTF141501E Package Outline H-30260-2 Package Description Thermally-enhanced slotted flange, single-ended Marking PTF141501E See Infineon distributor for future availability. Data Sheet 2 of 12 Typical Performance Drain Efficiency % DAB Drive-up at 32 Volts VDD = 32, IDQ = A, f = 1500 MHz, DAB Mode 2 25 20 Efficiency 15 Regrowth -35 -40 10 20 30 40 50 60 Output Power W Average Spectral Regrowth dBc Gain dB and Drain Efficiency % PTF141501E Input Return Loss dB CW Sweep in a Broadband Test Fixture VDD = 28 V, IDQ = A, POUT CW = 30 W 30 25 Drain Efficiency 15 Gain Return Loss 0 1400 1450 1500 1550 Frequency MHZ 0 -5 -10 -15 -20 -25 -30 1600 Drain Efficiency % Gain dB CW Sweep for Varying Bias Conditions VDD = 28 V, f = 1500 MHz 17 IDQ = A 16 IDQ = A IDQ = A 15 IDQ = A Output Power W CW 1000 Intermodulation Distortion dBc Intermodulation Distortion Products vs. Output Power VDD = 28, IDQ = A, f = GHz, tone spacing = 1 MHz -35 -40 Drain Efficiency

PDF Datasheet Preview

PTF141501E

Thermally-Enhanced High Power RF LDMOS FET 150 W, 1450 1500 MHz, 1600 1700 MHz

The PTF141501E is a 150-watt, GOLDMOS FET intended for DAB applications. This device is characterized for Digital Audio Broadcast operation in the 1450 to 1500 MHz band. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability.

DAB Drive-up at 28 Volts VDD = 28 V, f = 1500 MHz, IDQ = A, DAB mode 2

Drain Efficiency % Spectral Regrowth dBc
25 20 Efficiency 15
-30 Regrowth
10 20 30 40 50 60

Output Power W Average

RF Characteristics

PTF141501E Package H-30260-2
• Thermally-enhanced package, pB-free and RoHS-compliant
• Broadband internal matching
• Typical DAB Mode 2 performance at 1500

MHz, 32 V - Average output power = 50 W - Efficiency = 28% - Spectral regrowth = dBc - 975 kHz fC
• Typical DAB Mode 2 performance at 1500 MHz, 28 V - Average output power = 40 W - Efficiency = 26% - Spectral regrowth = dBc - 975 kHz fC
• Typical CW performance, 1500 MHz, 28 V - Minimum output power = 150 W - Linear gain = dB - Efficiency = 48% at
• Integrated ESD protection Human Body Model, Class 1 minimum
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR at 28 V, 150

W CW output power

DAB Measurements not subject to production by design/characterization in Infineon test fixture VDD = 32 V, IDQ = A, POUT = 50 WAVG, f = 1500 MHz, DAB Mode 2, fC 975 kHz

Characteristic

Symbol Min Typ

Spectral Regrowth

RGTH

Unit dBc

Gain Drain Efficiency

All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.

ESD Electrostatic discharge sensitive handling precautions!

Data Sheet
1 of 12

PTF141501E

RF Characteristics cont.

Two-Tone Measurements tested in Infineon test fixture VDD = 28 V, IDQ = A, POUT = 150 WPEP, f = 1500 MHz, tone spacing = 1 MHz

Characteristic

Symbol Min Typ

Gain

Drain Efficiency

Intermodulation Distortion

Unit dB % dBc

DC Characteristics

Characteristic Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current

Conditions VGS = 0 V, ID = 10 µA VDS = 28 V, VGS = 0 V VGS = 10 V, VDS = V VDS = 28 V, IDQ = A VGS = +10 V, VDS = 0 V
Ordering Information

Type PTF141501E

Package Outline H-30260-2

Package Description Thermally-enhanced slotted flange, single-ended

Marking PTF141501E
*See Infineon distributor for future availability. Data Sheet
2 of 12

Typical Performance

Drain Efficiency %

DAB Drive-up at 32 Volts VDD = 32, IDQ = A, f = 1500 MHz, DAB Mode 2
25 20 Efficiency 15

Regrowth -35 -40
10 20
30 40 50 60

Output Power W Average

Spectral Regrowth dBc Gain dB and Drain Efficiency %

PTF141501E

Input Return Loss dB

CW Sweep in a Broadband Test Fixture VDD = 28 V, IDQ = A, POUT CW = 30 W
30 25 Drain Efficiency
15 Gain

Return Loss
0 1400
1450
1500
1550

Frequency MHZ
0 -5 -10 -15 -20 -25 -30 1600

Drain Efficiency %

Gain dB

CW Sweep for Varying Bias Conditions

VDD = 28 V, f = 1500 MHz 17

IDQ = A 16 IDQ = A

IDQ = A
15 IDQ = A

Output Power W CW
1000

Intermodulation Distortion dBc

Intermodulation Distortion Products vs. Output Power

VDD = 28, IDQ = A, f = GHz, tone spacing = 1 MHz
-35 -40 Drain Efficiency

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Datasheet ID: PTF141501EV1 638487