TLE4917HTSA1

TLE4917HTSA1 Datasheet


TLE 4917

Part Datasheet
TLE4917HTSA1 TLE4917HTSA1 TLE4917HTSA1 (pdf)
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Low Power Hall Switch

TLE 4917
• Micro power design
• V to V battery operation
• High sensitivity and high stability of the
magnetic switching points
• High resistance to mechanical stress
• Digital output signal
• Switching for both poles of a magnet omnipolar
• Programming pin for the switching
direction of the output
• Not suitable for automotive application

P-TSOP6-6-2

Functional Description

The TLE 4917 is an Integrated Hall-Effect Sensor designed specifically to meet the requirements of low-power devices. e.g. as an On/Off switch in Cellular Flip-Phones, with battery operating voltages of 2.4V 5.5V.

Precise magnetic switching points and high temperature stability are achieved through the unique design of the internal circuit.

An onboard clock scheme is used to reduce the average operating current of the IC.

During the operate phase the IC compares the actual magnetic field detected with the internally compensated switching points. The output Q is switched at the end of each operating phase.

During the Stand-by phase the output stage is latched and the current consumption of the device reduced to some µA.

The IC switching behaviour is omnipolar, i.e. it can be switched on with either the North or South pole of a magnet.

The PRG pin can be connected to VS which holds the output VQ at a High level for B=0mT conversely the output VQ can be inverted by connecting the PRG pin to GND, which will hold the output VQ at a Low level for B=0mT. In this later case the presence of an adequate magnetic field will cause the output VQ to switch to a High level i.e. off state

Type TLE 4917

Marking 17s
Ordering Code Q62705K 605

Package P-TSOP6-6-2

Data Sheet

Pin Configuration top view

Top View PRG GND

Sensitive Area

VS GND Q
month year

AEP02801_C

Figure 1

Pin Definitions and Functions

Function

Supply Voltage

Ground

Open Drain Input

Ground

Ground

Programming Input

Data Sheet

Bias and Compensation

Circuits

Active Error Compensation

Hall Probe

Chopped Amplifier

Oscillator &

Sequencer

Threshold Generator

Comparator with

Hysteresis

Decision Logic

Latch
2, 4, 5 GND 3Q
6 PRG

AEB02800_C

Figure 2 Block Diagram

Circuit Description

The Low Power Hall IC Switch comprises a Hall probe, bias generator, compensation circuits, oscillator, output latch and an n-channel open drain output transistor.

The bias generator provides currents for the Hall probe and the active circuits. Compensation circuits stabilize the temperature behavior and reduce technology variations.

The Active Error Compensation rejects offsets in signal stages and the influence of mechanical stress to the Hall probe caused by molding and soldering processes and other thermal stresses in the package. This chopper technique together with the threshold generator and the comparator ensures high accurate magnetic switching points.

Very low power consumption is achieved with a timing scheme controlled by an oscillator and a sequencer. This circuitry activates the sensor for 50 µs typical operating time sets the output state after sequential questioning of the switch points and latches it with the beginning of the following standby phase typ. 130 ms . In the standby phase the average current is reduced to typical µA. Because of the long standby time compared to the operating time the overall averaged current is only slightly higher than the standby current.

By connecting the programming pin to GND normal to VS the Output State can be inverted to further reduce the current consumption in applications where a high magnetic field is the
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Datasheet ID: TLE4917HTSA1 638761