SPN04N60S5
SPN04N60S5 Datasheet
SPN04N60S5
| Part | Datasheet |
|---|---|
SPN04N60S5 |
SPN04N60S5 (pdf) |
| PDF Datasheet Preview |
|---|
| Cool MOS Power Transistor • Worldwide best RDS on in SOT 223 • Ultra low gate charge • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPN04N60S5 VDS RDS on 600 V A SOT-223 VPS05163 Type SPN04N60S5 Package SOT-223 Ordering Code Q67040-S4211 Marking 04N60S5 Maximum Ratings Parameter Continuous drain current TA = 25 °C TA = 70 °C Pulsed drain current, tp limited by Tjmax TA = 25 °C Gate source voltage Gate source voltage AC f >1Hz Power dissipation, TA = 25°C Operating and storage temperature Symbol ID ID puls VGS Ptot Tj , Tstg Value Unit ±20 ±30 +150 2005-02-21 SPN04N60S5 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = A, Tj = 125 °C Symbol dv/dt Value 20 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - soldering point SMD version, device on PCB min. footprint 6 cm2 cooling area 1 Soldering temperature, mm in. from case for 10s Symbol RthJS RthJA Tsold Values Unit min. typ. max. - K/W - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V BR DSS VGS=0V, ID=0.25mA 600 Drain-Source avalanche breakdown voltage V BR DS VGS=0V, ID=4.5A - 700 - Gate threshold voltage |
| More datasheets: WP7104SYCK | K110620001 | IDY15S120XKSA1 | MDM-25SBSM7-A174 | DCMMN27C2SN | FIR-SER-XP-N1 | TH71112ENE-BAA-000-TR | TH71112ENE-BAA-000-RE | KSD1944TU | ICS9LPR464AGLFT |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived SPN04N60S5 Datasheet file may be downloaded here without warranties.