IDY15S120XKSA1

IDY15S120XKSA1 Datasheet

2nd Generation thinQ! SiC Schottky Diode IDY15S120

Part	Datasheet
IDY15S120XKSA1	IDY15S120XKSA1 (pdf)

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Silicon Carbide Diode 2nd Generation thinQ! 2nd Generation thinQ! SiC Schottky Diode IDY15S120 Data Sheet Industrial & Multimarket 2nd Generation thinQ! SiC Schottky Diode The second generation of Infineon SiC Schottky diodes has emerged over the years as the industry standard. The IDYxxS120 products are extending the already broad portfolio with the new TO-247HC high creepage package. The new package layout is fully compatible with the industry standard TO247, and can therefore easily be placed in already existing designs, with no extra efforts. The higher creepage distance increases the safety margin against the risk of short circuits, especially arcing, which might be triggered by the presence of dust or dirt inside the system. This reduces the need of additional chemical silicone gel or creams or mechanical sheaths or foils solutions to lower the pollution level between the leads, with all consequent benefits of a lean and faster manufacturing process • System efficiency improvement over Si diodes • System cost / size savings due to reduced cooling requirements • Enabling higher frequency / increased power density solutions • Higher system reliability due to lower operating temperatures and less fans • Package design with high creepage distance • Reduced EMI • Solar applications UPS Motor Drives • SMPS e.g. CCM PFC Table 1 Key Performance Parameters Parameter Value Unit 1200 IF TC < 150°C 15 Table 2 Pin 1 A Pin Definition Pin2 C Pin 3 A IDY15S120 Type / Ordering Code IDY15S120 Package PG-TO247HC-3 Marking D15S120 Related Links IFX SiC Diodes Webpage 1 J-STD20 and JESD22 Final Data Sheet 2nd Generation thinQ! SiC Schottky Diode IDY15S120 Table of Contents Table of Contents Description 2 Table of Contents 4 Maximum ratings 5 Thermal characteristics 5 Electrical characteristics 6 Electrical characteristics diagrams 7 Package outlines 10 Final Data Sheet 2nd Generation thinQ! SiC Schottky Diode IDY15S120 Maximum ratings Maximum ratings Table 3 Maximum ratings Parameter Continuous forward current Surge non-repetitive forward current, sine halfwave Non-repetitive peak forward current t value IF, SM IF, max VRRM dv/dt Ptot Tj,Tstg Values leg/device Min. - Typ. - Max. 39/78 33/66 150/300 10/40 6/26 1200 -55 - 100/175 150 Unit Note / Test Condition V/ns W °C Ncm TC= < 150°C TC= 25°C, tp = 10 ms TC= 150°C, tp = 10 ms TC= 25°C, tp = 10 µs TC= 25°C, tp = 10 ms TC= 150°C, tp = 10 ms Tj= 25°C VR= V TC= 25 °C M3 screws Maximum of mounting processes:3 Thermal characteristics Table 4 Thermal characteristics

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Silicon Carbide Diode
2nd Generation thinQ!
2nd Generation thinQ! SiC Schottky Diode IDY15S120

Data Sheet

Industrial & Multimarket
2nd Generation thinQ! SiC Schottky Diode

The second generation of Infineon SiC Schottky diodes has emerged over the years as the industry standard. The IDYxxS120 products are extending the already broad portfolio with the new TO-247HC high creepage package.

The new package layout is fully compatible with the industry standard TO247, and can therefore easily be placed in already existing designs, with no extra efforts.

The higher creepage distance increases the safety margin against the risk of short circuits, especially arcing, which might be triggered by the presence of dust or dirt inside the system. This reduces the need of additional chemical silicone gel or creams or mechanical sheaths or foils solutions to lower the pollution level between the leads, with all consequent benefits of a lean and faster manufacturing process
• System efficiency improvement over Si diodes
• System cost / size savings due to reduced cooling requirements
• Enabling higher frequency / increased power density solutions
• Higher system reliability due to lower operating temperatures and less fans
• Package design with high creepage distance
• Reduced EMI
• Solar applications UPS Motor Drives
• SMPS e.g. CCM PFC

Table 1 Key Performance Parameters

Parameter

Value

Unit
1200

IF TC < 150°C 15

Table 2 Pin 1 A

Pin Definition Pin2 C

Pin 3 A

IDY15S120
Type / Ordering Code IDY15S120

Package PG-TO247HC-3

Marking D15S120

Related Links IFX SiC Diodes Webpage
1 J-STD20 and JESD22

Final Data Sheet
2nd Generation thinQ! SiC Schottky Diode IDY15S120

Table of Contents

Table of Contents

Description 2

Table of Contents 4

Maximum ratings 5

Thermal characteristics 5

Electrical characteristics 6

Electrical characteristics diagrams 7

Package outlines 10

Final Data Sheet
2nd Generation thinQ! SiC Schottky Diode IDY15S120

Maximum ratings

Maximum ratings

Table 3 Maximum ratings Parameter

Continuous forward current Surge non-repetitive forward current, sine halfwave Non-repetitive peak forward current t value

IF, SM

IF, max

VRRM dv/dt

Ptot Tj,Tstg

Values leg/device

Min. -

Typ. -

Max. 39/78 33/66 150/300
10/40
6/26
1200
-55 -
100/175 150

Unit Note / Test Condition

V/ns W °C Ncm

TC= < 150°C TC= 25°C, tp = 10 ms TC= 150°C, tp = 10 ms TC= 25°C, tp = 10 µs TC= 25°C, tp = 10 ms TC= 150°C, tp = 10 ms Tj= 25°C VR= V TC= 25 °C

M3 screws Maximum of mounting processes:3

Thermal characteristics

Table 4 Thermal characteristics

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Datasheet ID: IDY15S120XKSA1 638072