KSD1944TU
KSD1944TU Datasheet
KSD1944
| Part | Datasheet |
|---|---|
KSD1944TU |
KSD1944TU (pdf) |
| PDF Datasheet Preview |
|---|
| KSD1944 KSD1944 High Gain Power Transistor TO-220F 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current TC=25°C Junction Temperature Storage Temperature Value 80 60 8 3 30 150 - 55 ~ 150 Units V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCEO ICBO IEBO h FE VBE sat VCE sat Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage IC = 25mA, IB = 0 VCB = 80V, IE = 0 VEB = 8V, IC = 0 VCE = 4V, IC = 0.5A IC = 2A, IB = 0.05A IC = 2A, IB = 0.05A Min. 60 Max. 100 10 2000 1 Units V µA µA 2000 Fairchild Semiconductor International Typical Characteristics Ic[A], COLLECTOR CURRENT IB = 1.2mA IB = 1mA IB = 0.8mA IB = 0.6mA IB = 0.4mA IB = 0.2mA VCE[V], COLLECTOR-EMITTER VOLTAGE Figure Static Characteristic VBE sat , VCE sat [V], SATURATION VOLTAGE VBE sat Ic = 40 IB VCE sat IC[A], COLLECTOR CURRENT Figure Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage PC[W], POWER DISSIPATION |
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