SPN03N60C3
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SPN03N60C3 (pdf) |
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Cool MOS Power Transistor SPN03N60C3 VDS Tjmax 650 V RDS on SOT-223 VPS05163 Type SPN03N60C3 Package SOT-223 Ordering Code Q67040S4552 Marking 03N60C3 Maximum Ratings Parameter Continuous drain current TA = 25 °C TA = 70 °C Pulsed drain current, tp limited by Tjmax TA = 25 °C ID puls Avalanche current, repetitive tAR limited by Tjmax IAR Gate source voltage static Gate source voltage AC f >1Hz Power dissipation, TA = 25°C Ptot Operating and storage temperature Tj , Tstg Value Unit ±20 ±30 +150 2005-02-21 SPN03N60C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - soldering point SMD version, device on PCB min. footprint 6 cm2 cooling area 1 Symbol dv/dt Value 50 Unit V/ns RthJS RthJA Values Unit min. typ. max. - K/W Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. |
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