PTFA260451E V1
PTFA260451E V1 Datasheet
PTFA260451E
| Part | Datasheet |
|---|---|
PTFA260451E V1 |
PTFA260451E V1 (pdf) |
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| PTFA260451E Thermally-Enhanced High Power RF LDMOS FET 45 W, GHz The PTFA260451E is a thermally-enhanced 45-watt, internallymatched GOLDMOS FET intended for CDMA2000, Super3G 3GPP TSG RAN , and WiMAX applications from to GHz. Thermallyenhanced packaging provide the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. PTFA260451E Package H-30265-2 Drain Efficiency % Adj. Ch. Power Ratio dBc 3-Carrier CDMA2000 Performance VDD = 28 V, IDQ = 500 mA, = 2680 MHz Alt_1 MHz Adj MHz Efficiency -65 Output Power, Avg. dBm • Lead-free, RoHS-compliant and thermallyenhanced packaging • Internal matching for wideband performance • Typical three-carrier CDMA2000 performance - Average output power = 10 W - Gain = 14 dB - Efficiency = 24% - ACPR = dBc • Typical CW performance - Output power at = 50 W - Efficiency = 46% • Integrated ESD protection Human Body Model, Class 2 minimum • Excellent thermal stability • Low HCI Drift • Capable of handling 10:1 VSWR 28 V, 45 W CW output power RF Performance CDMA Measurements not subject to production by design/characterization in Infineon test fixture VDD = 28 V, IDQ = 500 mA, POUT = 10 W AVG, = 2680 MHz Characteristic Adjacent Channel Power Ratio Gain Drain Efficiency Symbol Min Typ ACPR Unit dBc dB % All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD Electrostatic discharge sensitive handling precautions! Data Sheet 1 of 10 PTFA260451E RF Performance cont. Two-tone Measurements tested in Infineon test fixture VDD = 28 V, IDQ = 500 mA, POUT = 45 W PEP, = 2680 MHz, tone spacing = 1 MHz Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol Min Typ Unit dB % dBc DC Characteristics Characteristic Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current Conditions VGS = 0 V, ID = 10 mA VDS = 28 V, VGS = 0 V VDS = 63 V, VGS = 0 V VGS = 10 V, VDS = V VDS = 28 V, IDQ = 500 mA VGS = 10 V, VDS = 0 V Symbol V BR DSS IDSS RDS on VGS IGSS Ordering Information Type and Version PTFA260451E V1 Package Outline H-30265-2 Package Description Thermally-enhanced slotted flange, single-ended Marking PTFA260451E *See Infineon distributor for future availability. Data Sheet 2 of 10 PTFA260451E Adj. Ch. Power Ratio dBc Typical Performance data taken in production test fixture Drain Efficiency % IS-95 CDMA Performance VDD = 28 V, IDQ = 500 mA, = 2680 MHz TCASE = 25°C 56 TCASE = 85°C Alt1 MHz Adj 750 kHz 40 Ef f iciency Output Power dBm , Avg. -40 -45 -50 -55 -60 -65 -70 -75 45 Adj. Ch. Power Ratio dBc Drain Efficiency % 3-Carrier CDMA2000 Performance VDD = 28 V, IDQ = 500 mA, = 2680 MHz TCASE = 25°C 60 TCASE = 85°C Alt_1 Adj MHz 30 20 Efficiency Output Power, Avg. dBm -40 -45 -50 -55 -60 -65 -70 50 Gain dB Gain & Efficiency vs. Output Power VDD = 28 V, IDQ = 500 mA, = 2680 MHz 16 Gain 15 12 Efficiency 11 10 25 30 35 40 45 50 Output Power dBm 70 60 50 40 30 20 10 0 55 Drain Efficiency % Power Gain dB Gain vs. Output Power VDD = 28 V, = 2680 MHz 17 IDQ = 650 m A 15 IDQ = 500 m A 14 IDQ = 350 m A Output Power dBm Data Sheet 3 of 10 |
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