APTM120H57FTG
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APTM120H57FTG (pdf) |
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APTM120H57FTG Full - Bridge MOSFET Power Module VDSS = 1200V RDSon = typ Tj = 25°C ID = 17A Tc = 25°C VBUS O UT1 O UT2 G2 S2 NT C1 0/V BU S G4 S4 NT C2 G3 S3 VBUS S1 G1 G4 S4 0/VBUS S2 G2 OUT2 OUT1 NTC2 NTC1 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Absolute maximum ratings Parameter Max ratings Unit VDSS IDM VGS RDSon Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance 1200 Tc = 25°C Tc = 80°C ±30 PD Maximum Power Dissipation Tc = 25°C IAR Avalanche current repetitive and non repetitive EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 3000 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on APTM120H57FTG All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions |
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