SPB100N08S2-07
SPB100N08S2-07 Datasheet
SPP100N08S2-07 SPB100N08S2-07
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SPB100N08S2-07 |
SPB100N08S2-07 (pdf) |
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SPP100N08S2-07 |
SPP100N08S2-07 |
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| Power-Transistor Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated SPP100N08S2-07 SPB100N08S2-07 Product Summary RDS on max. SMD version 100 A P- TO263 -3-2 P- TO220 -3-1 Type SPP100N08S2-07 SPB100N08S2-07 Package P- TO220 -3-1 P- TO263 -3-2 Ordering Code Q67060-S6044 Q67060-S6046 Marking PN0807 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current 1 TC=25°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=80 , VDD=25V, IS=100A, VDS=60V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 ID puls EAR dv/dt VGS Ptot Tj , Tstg Value 100 400 ±20 300 +175 55/175/56 Unit A kV/µs V W °C 2003-05-09 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: min. footprint 6 cm2 cooling area 3 SPP100N08S2-07 SPB100N08S2-07 Values Unit min. typ. max. RthJC RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V BR DSS 75 |
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