HGT1N30N60A4D

HGT1N30N60A4D Datasheet

HGT1N30N60A4D

Part	Datasheet
HGT1N30N60A4D	HGT1N30N60A4D (pdf)

PDF Datasheet Preview
Data Sheet HGT1N30N60A4D December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1N30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49345. Ordering Information PACKAGE BRAND HGT1N30N60A4D SOT-227 30N60A4D NOTE When ordering, use the entire part number. • 100kHz Operation At 390V, 20A • 600V Switching SOA Capability • Typical Fall Time 58ns at TJ = 125oC • Low Conduction Loss Packaging JEDEC STYLE SOT-227B GATE EMITTER TAB ISOLATED COLLECTOR EMITTER Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767

PDF Datasheet Preview

Data Sheet

HGT1N30N60A4D

December 2001
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGT1N30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.

Formerly Developmental Type TA49345.
Ordering Information

PACKAGE

BRAND

HGT1N30N60A4D

SOT-227
30N60A4D
NOTE When ordering, use the entire part number.
• 100kHz Operation At 390V, 20A
• 600V Switching SOA Capability
• Typical Fall Time 58ns at TJ = 125oC
• Low Conduction Loss

Packaging

JEDEC STYLE SOT-227B

GATE

EMITTER

TAB ISOLATED

COLLECTOR EMITTER

Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived HGT1N30N60A4D Datasheet file may be downloaded here without warranties.

Datasheet ID: HGT1N30N60A4D 633890