SPB80N03S2L05T
SPB80N03S2L05T Datasheet
SPI80N03S2L-05 SPP80N03S2L-05,SPB80N03S2L-05
| Part | Datasheet |
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SPB80N03S2L05T |
SPB80N03S2L05T (pdf) |
| Related Parts | Information |
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SPB80N03S2L-05 |
SPB80N03S2L-05 |
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SPP80N03S2L05AKSA1 |
SPP80N03S2L05AKSA1 |
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SPB80N03S2L-05 G |
SPB80N03S2L-05 G |
SPI80N03S2L-05 |
SPI80N03S2L-05 |
| PDF Datasheet Preview |
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| Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS on P- TO262 -3-1 product FOM • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated SPI80N03S2L-05 SPP80N03S2L-05,SPB80N03S2L-05 Product Summary VDS RDS on ID 30 V 80 A P- TO263 -3-2 P- TO220 -3-1 Type SPP80N03S2L-05 SPB80N03S2L-05 SPI80N03S2L-05 Package Ordering Code P- TO220 -3-1 Q67042-S4033 P- TO263 -3-2 Q67042-S4032 P- TO262 -3-1 Q67042-S4093 Marking 2N03L05 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current 1 TC=25°C Value Pulsed drain current ID puls TC=25°C Avalanche energy, single pulse ID=80 A , VDD=25V, Repetitive avalanche energy, limited by Tjmax2 EAR dv/dt IS=80A, VDS=24V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 VGS Ptot Tj , Tstg ±20 167 +175 55/175/56 Unit A kV/µs V W °C 2003-01-17 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB: min. footprint 6 cm2 cooling area 3 SPI80N03S2L-05 SPP80N03S2L-05,SPB80N03S2L-05 Values Unit min. typ. max. RthJC RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max. |
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